STW43NM60N STMicroelectronics

STW43NM60N N-channel 600 V, 0.075 , 35 A MDmesh II Power MOSFET TO-247 Features V R DSS DS(on) Type I D ( Tjmax) max STW43NM60N 650 V <0.088 35 A 100% avalanche tested Low input capacitance and gate charge 3 2 Low gate input resistance 1 TO-247 Application Switching applications Description Figure 1. Internal schematic diagram This series of devices implements second generation MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the Companys strip layout to yield one of the worlds lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 3 Table 1. Device summary Order code Marking Package Packaging STW43NM60N 43NM60N TO-247 Tube January 2009 Rev 3 1/12 www.st.com 12Contents STW43NM60N Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12