STW40N65M2 STMicroelectronics

STW40N65M2 N-channel 650 V, 0.087 typ., 32 A MDmesh M2 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V R max. I DS DS(on) D STW40N65M2 650 V 0.099 32 A Extremely low gate charge Excellent output capacitance (C ) profile OSS 3 100% avalanche tested 2 Zener-protected 1 Applications TO-247 Switching applications Description Figure 1: Internal schematic diagram This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STW40N65M2 40N65M2 TO-247 Tube February 2015 DocID027443 Rev 1 1/12 www.st.com This is information on a product in full production. Contents STW40N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.2 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 TO-247 package information ............................................................. 9 5 Revision history ............................................................................ 11 2/12 DocID027443 Rev 1