IPA95R450P7 MOSFET PG-TO 220 FP 950V CoolMOS P7 SJ Power Device The latest 950V CoolMOS P7 series sets a new benchmark in 950V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineons over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E reduced Q , C , and C DS(on) oss g iss oss Best-in-class V of 3V and smallest V variation of 0.5V (GS)th (GS)th Integrated Zener Diode ESD protection Best-in-class CoolMOS quality and reliability Fully optimized portfolio Drain Pin 2 Benefits Best-in-class performance *1 Gate Pin 1 Enabling higher power density designs, BOM savings and lower *2 assembly costs Easy to drive and to parallel Source *1: Internal body diode *2: Integrated ESD diode Pin 3 Better production yield by reducing ESD related failures Less production issues and reduced field returns Easy to select right parts for fine tuning of designs Potential applications Recommended for flyback topologies for LED Lighting, low power Chargers and Adapters, Smart Meter, AUX power and Industrial power. Also suitable for PFC stage in Consumer and Solar applications. Product validation Fully qualified according to JEDEC for Industrial Applications Please note: For MOSFET paralleling the use of ferrite beads on the gate or seperate totem poles is generally recommended. Table 1 Key Performance Parameters Parameter Value Unit VDS Tj=25C 950 V R 0.45 DS(on),max Q 35 nC g,typ I 14 A D E 500V 2.9 J oss VGS(th),typ 3 V ESD class (HBM) 2 - Type / Ordering Code Package Marking Related Links IPA95R450P7 PG-TO 220 FullPAK 95R450P7 see Appendix A Final Data Sheet 1 Rev. 2.3, 2020-01-31950V CoolMOS P7 SJ Power Device IPA95R450P7 Table of Contents Description . 1 Maximum ratings 3 Thermal characteristics 4 Electrical characteristics . 5 Electrical characteristics diagrams . 7 Test Circuits . 11 Package Outlines . 12 Appendix A 13 Revision History 14 Trademarks . 14 Disclaimer 14 Final Data Sheet 2 Rev. 2.3, 2020-01-31