STU6N65M2-S STMicroelectronics

STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 typ., 4 A MDmesh M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes V R max I DS DS(on) D STF6N65M2 3 3 STP6N65M2 650 V 1.35 4 A 2 2 1 1 STU6N65M2 TO-220FP TO-220 TAB Extremely low gate charge Excellent output capacitance (C ) profile OSS 3 2 100% avalanche tested 1 IPAK Zener-protected Applications Figure 1. Internal schematic diagram , TAB Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM15572v1 Table 1. Device summary Order codes Marking Package Packaging STF6N65M2 TO-220FP STP6N65M2 6N65M2 TO-220 Tube STU6N65M2 IPAK August 2014 DocID026776 Rev 1 1/18 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to www.st.com change without notice. Contents STF6N65M2, STP6N65M2, STU6N65M2 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 TO-220FP, STF6N65M2 .11 4.2 TO-220, STP6N65M2 13 4.3 IPAK, STU6N65M2 15 5 Revision history . 17 2/18 DocID026776 Rev 1