X-On Electronics has gained recognition as a prominent supplier of STU7N80K5 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STU7N80K5 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STU7N80K5 STMicroelectronics

STU7N80K5 electronic component of STMicroelectronics
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Part No.STU7N80K5
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: STMicroelectronics MOSFET N-Ch 800 V 0.95 Ohm 6 A Zener-protecte
Datasheet: STU7N80K5 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7099 ea
Line Total: USD 0.71 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
38
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 32
Multiples : 1
32 : USD 1.279

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STU7N80K5 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STU7N80K5 and other electronic components in the MOSFETs category and beyond.

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STD7N80K5, STP7N80K5, STU7N80K5 Datasheet N-channel 800 V, 0.95 typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 V R I Order code DS DS(on) max D 1 DPAK STD7N80K5 3 2 TO-220 TAB 1 STP7N80K5 800 V 1.2 6 A STU7N80K5 3 2 IPAK 1 Industrys lowest R x area DS(on) Industrys best FoM (figure of merit) D(2, TAB) Ultra-low gate charge 100% avalanche tested G(1) Zener-protected Applications S(3) Switching applications AM01476v1 tab Description These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N80K5 STP7N80K5 STU7N80K5 DS9173 - Rev 7 - September 2020 www.st.com For further information contact your local STMicroelectronics sales office.STD7N80K5, STP7N80K5, STU7N80K5 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate- source voltage 30 V GS I Drain current (continuous) at T = 25 C 6 A D C I Drain current (continuous) at T = 100 C 3.8 A D C (1) I Drain current (pulsed) 24 A DM P Total power dissipation at T = 25 C 110 W TOT C Max current during repetitive or single pulse avalanche I 2 A AR (pulse width limited by T ) jmax Single pulse avalanche energy E 88 mJ AS (starting T = 25 C, I =I , V = 50 V) J D AS DD (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (2) di/dt Peak diode recovery current slope 100 A/s (3) dv/dt MOSFET dv/dt ruggedness 50 V/ns T Operating junction temperature range C j -55 to 150 T Storage temperature range C stg 1. Pulse width limited by safe operating area. 2. I 6 A, V V SD DS(peak) (BR)DSS 3. V 640 V DS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 1.14 C/W thj-case R Thermal resistance junction-amb 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1 inch FR-4, 2 Oz copper board. DS9173 - Rev 7 page 2/23

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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