STU2N105K5 STMicroelectronics

STD2N105K5, STP2N105K5, STU2N105K5 N-channel 1050 V, 6 typ., 1.5 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB 3 Order codes V R max I P DS DS(on) D TOT 1 STD2N105K5 DPAK STP2N105K5 1050 V 8 1.5 A 60 W TAB STU2N105K5 TAB Industrys lowest R x area DS(on) Industrys best figure of merit (FoM) 3 3 2 2 1 1 Ultra low gate charge IPAK TO-220 100% avalanche tested Zener-protected Figure 1. Internal schematic diagram Applications 7 % Switching applications Description * These very high voltage N-channel Power MOSFETs are designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. 6 AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STD2N105K5 DPAK Tape and reel STP2N105K5 2N105K5 TO-220 Tube STU2N105K5 IPAK November 2014 DocID026321 Rev 3 1/21 This is information on a product in full production. www.st.comContents STD2N105K5, STP2N105K5, STU2N105K5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 4.1 DPAK, STD2N105K5 .11 4.2 TO-220, STP2N105K5 . 14 4.3 IPAK, STU2N105K5 . 16 5 Packaging mechanical data 18 6 Revision history . 20 2/21 DocID026321 Rev 3