STU3N65M6 Datasheet N-channel 650 V, 1.4 typ., 3.5 A MDmesh M6 Power MOSFET in an IPAK package Features TAB V R max. I Order code DS DS(on) D STU3N65M6 650 V 1.5 3.5 A 3 2 Reduced switching losses 1 Lower R per area vs previous generation DS(on) IPAK Low gate input resistance 100% avalanche tested Zener-protected D(2, TAB) Applications G(1) Switching applications Description The new MDmesh M6 technology incorporates the most recent advancements to S(3) AM01475V1 the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent R per area improvement with DS(on) one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency. Product status STU3N65M6 Product summary Order code STU3N65M6 Marking 3N65M6 Package IPAK Packing Tube DS11590 - Rev 2 - December 2018 www.st.com For further information contact your local STMicroelectronics sales office.STU3N65M6 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS I Drain current (continuous) at T = 25 C 3.5 A D C I Drain current (continuous) at T = 100 C 2.2 A D C (1) I Drain current (pulsed) 14 A DM P Total power dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 5 V/ns (3) dv/dt MOSFET dv/dt ruggedness 100 T Operating junction temperature range J -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area 2. I 3.5 A, di/dt=400 A/s V < V , V = 400 V SD DS peak (BR)DSS DD 3. V 520 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 2.78 thj-case C/W R Thermal resistance junction-ambient 100 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit I Avalanche current, repetitive or not repetitive (pulse width limited by T ) 1 A AR jmax E Single pulse avalanche energy (starting T =25C, I = I , V =50 V) 78 mJ as j D AR DD DS11590 - Rev 2 page 2/15