STU5N80K5 STMicroelectronics

STU5N80K5 N-channel 800 V, 1.50 typ., 4 A MDmesh K5 Power MOSFET in an IPAK package Datasheet - preliminary data Features Order code V R max. I DS DS(on) D TAB STU5N80K5 800 V 1.75 4 A Industrys lowest R x area DS(on) 3 2 Industrys best FoM (figure of merit) 1 Ultra-low gate charge 100% avalanche tested Zener-protected IPAK Applications Switching applications Figure 1: Internal schematic diagram Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Table 1: Device summary Order code Marking Package Packing STU5N80K5 5N80K5 IPAK Tube June 2017 DocID030751 Rev 1 1/12 www.st.com This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STU5N80K5 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 IPAK type A mechanical data ............................................................ 9 5 Revision history ............................................................................ 11 2/12 DocID030751 Rev 1