DMC3071LVT COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D BV R Device DSS DS(ON) Low Input Capacitance T = +25C A Fast Switching Speed 50m V = 10V 4.6A GS Low Input/Output Leakage N-Channel 30V 90m V = 4.5V 3.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 95m V = -10V -3.3A GS Halogen and Antimony Free. Green Device (Note 3) P-Channel -30V 140m V = -4.5V -2.7A GS Mechanical Data Description Case: TSOT26 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (RDS(ON)) and yet maintain superior switching performance, UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Backlighting Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.013 grams (Approximate) Power Management Functions D2 D1 TSOT26 G1 1 6 D1 S2 2 5 S1 G2 G1 G2 3 4 D2 Top View Top View S2 S1 Q1 N-Channel MOSFET Q2 P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMC3071LVT-7 TSOT26 3000 / Tape & Reel DMC3071LVT-13 TSOT26 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMC3071LVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Value Q2 Value Unit Drain-Source Voltage 30 -30 V V DSS Gate-Source Voltage V 20 20 V GSS Steady T = +25C 4.6 -3.3 A Continuous Drain Current (Note 6) V = 10V I A GS D State 3.6 -2.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1.5 -1.3 A I S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 20 -10 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.7 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 186 C/W JA Total Power Dissipation (Note 6) 1.1 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 117 R JA C/W Thermal Resistance, Junction to Case 45 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics Q1 N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 30V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A GS(TH) DS GS D V = 10V, I = 3.5A 34 50 GS D Static Drain-Source On-Resistance m R DS(ON) 44 90 V = 4.5V, I = 2.0A GS D Diode Forward Voltage V 0.8 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 190 C iss V = 15V, V = 0V DS GS Output Capacitance 36 pF C oss f = 1.0MHz Reverse Transfer Capacitance 26 C rss Gate Resistance 4.2 R V = 0V, V = 0V, f = 1MHz g DS GS 2.1 Total Gate Charge (V = 4.5V) Q GS g 4.5 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 4A DS D 0.5 Gate-Source Charge Q gs 0.8 Gate-Drain Charge Q gd 1.7 Turn-On Delay Time t D(ON) 5.7 Turn-On Rise Time t R V = 15V, V = 10V, DS GS ns Turn-Off Delay Time 6.0 t R = 3, I = 4A D(OFF) G D Turn-Off Fall Time 1.6 t F Reverse Recovery Time 4.2 ns t RR I = 4A, di/dt = 100A/s F Reverse Recovery Charge 0.5 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 10 May 2018 DMC3071LVT www.diodes.com Diodes Incorporated Document number: DS40062 Rev. 2 - 2