DMG6602SVTX COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I D Low On-Resistance Device V R (BR)DSS DS(ON) T = +25C A Low Input Capacitance 60m V = 10V 3.4A GS Fast Switching Speed Q1 30V 100m V = 4.5V 2.7A GS Low Input/Output Leakage 95m V = -10V -2.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Q2 -30V Halogen and Antimony Free. Green Device (Note 3) -2.3A 140m V = -4.5V GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: TSOT26 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: Finish Matte Tin annealed over Copper leadframe. Backlighting e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.013 grams (approximate) Power management functions D1 D2 TSOT26 G1 1 6 D1 S2 2 5 S1 G1 G2 G2 3 4 D2 Top View Top View S1 S2 Q1 N-Channel MOSFET Q2 P-Channel MOSFET Ordering Information (Note 4) Part Number Case Packaging DMG6602SVTX-7 TSOT26 3000 / Tape & Reel DMG6602SVTX-13 TSOT26 10000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMG6602SVTX Maximum Ratings Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 3.4 A Continuous Drain Current (Note 5) V = 10V I A GS D State 2.7 T = +70C A T = +25C Steady A 2.7 A Continuous Drain Current (Note 5) V = 4.5V I GS D State 2.2 T = +70C A 1.5 A Maximum Continuous Body Dio de Forward Cur r ent (Note 6 ) IS Pulsed Drain Current (Note 6) I 13.0 A DM Maximum Ratings Q2 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V -30 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C -2.8 A Continuous Drain Current (Note 5) V = -10V I A GS D State = +70C -2.4 T A Steady T = +25C -2.3 A A Continuous Drain Current (Note 5) V = -4.5V I GS D State -2.1 T = +70C A -1.5 A Maximum Continuous Body Dio de Forward Cur r ent (Note 6 ) IS Pulsed Drain Current (Note 6) -11.2 A I D Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note5) P 1.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 124 C/W A JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 24V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.2 1.8 V V = V , I = 250 A GS(th) DS GS D V = 10V, I = 3.1A GS D 35 60 Static Drain-Source On-Resistance R 50 100 m V = 4.5V, I = 2A DS (ON) GS D 100 200 V = 3.3V, I = 1.5A GS D Forward Transfer Admittance 4 S Y V = 5V, I = 3.1A fs DS D Diode Forward Voltage 0.8 1 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 234 C iss V = 15V, V = 0V, DS GS Output Capacitance 42 pF C oss f = 1.0MHz Reverse Transfer Capacitance 40 C rss 1.45 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 3.6 Total Gate Charge (V = 4.5V) Q V = 15V, V = 4.5V, I = 3A GS g DS GS D 7.3 Total Gate Charge (V = 10V) Q GS g nC 0.9 Gate-Source Charge Q V = 15V, V = 10V, I = 3A gs DS GS D 1.6 Gate-Drain Charge Q gd 3.6 Turn-On Delay Time t D(on) Turn-On Rise Time 2.5 t V = 10V, V = 15V, r GS DS ns Turn-Off Delay Time 16 R = 3 , R = 1.7 t G L D(off) Turn-Off Fall Time 6 t f Notes: 5. Device mounted on FR-4 with minimum recommended pad layout, single sided. 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 9 September 2013 DMG6602SVTX Diodes Incorporated www.diodes.com Document number: DS36265 Rev. 3 - 5 ADVANCE INFORMATION