DMHT3006LFJ 30V N-CHANNEL ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance T = +25C A 13A 10m V = 10V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS 30V 15m V = 4.5V 11A GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: V-DFN5045-12 (R ), yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Applications e4 Solderable per MIL-STD-202, Method 208 High-Efficiency Bridge Rectifiers Weight: 0.056grams (Approximate) S3 S2 V-DFN5045-12 (Type C) 6 7 Q3 Q2 S3 8 5 S2 S2 Pin 1 S2 G2 G3 4 G2 9 S1/D2 D2 D1 D3 G1 S4/D3 S1/D2 D1 10 3 D4 S3 S3 D4 11 2 D1 G3 S4/D3 D4 G4 G4 G1 12 1 Q4 Q1 Top View Bottom View Internal Schematic Top View Ordering Information (Note 4) Part Number Case Quantity per Reel DMHT3006LFJ-13 V-DFN5045-12 (Type C) 3000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMHT3006LFJ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 13 A Continuous Drain Current (Note 6) V = 10V I A GS D State 10 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Continuous Source-Drain Diode Current (Note 6) T = +25C 2 A A I S Avalanche Current (Note 7) L = 0.1mH 23 A I AS Avalanche Energy (Note 7) L = 0.1mH 28 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.3 W T = +25C P A D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 95 C/W JA Total Power Dissipation (Note 6) T = +25C P 2.1 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 60 C/W JA Thermal Resistance, Junction to Case (Note 6) R 22 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current (T = +25C) I V = 24V, V = 0V J DSS DS GS V = +20V, V = 0V GS DS Gate-Source Leakage 100 nA I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 5.8 10 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 7.8 15 V = 4.5V, I = 8A GS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1171 iss V = 15V, V = 0V, DS GS Output Capacitance 421 pF C oss f = 1.0MHz Reverse Transfer Capacitance 63 C rss Gate Resistance 1.9 R V = 0V, V = 0V, f = 1.0MHz g DS GS 9.0 Total Gate Charge (V = 4.5V) Q GS g 17 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 9A DD D 2.7 Gate-Source Charge Q gs 4.7 Gate-Drain Charge Q gd Turn-On Delay Time t 7.4 D(ON) 54 Turn-On Rise Time t R V = 15V, V = 10V, DD GS ns Turn-Off Delay Time 16 R = 3, I = 9A tD(OFF) g D Turn-Off Fall Time 4.3 t F Reverse Recovery Time 18 ns t RR I = 1.5A, di/dt = 100A/s F Reverse Recovery Charge 8.5 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMHT3006LFJ September 2018 Diodes Incorporated www.diodes.com Datasheet number: DS40627 Rev. 3 - 2 ADVANCED INFORMATION