STW26N65DM2 STMicroelectronics

STW26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-247 package Features Order code V R max. I P DS DS(on) D TOT STW26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications Switching applications G(1) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) AM01475V1 recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW26N65DM2 Product summary Order code STW26N65DM2 Marking 26N65DM2 Package TO-247 Packing Tube DS12622 - Rev 1 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW26N65DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 20 case I A D Drain current (continuous) at T = 100 C 12.6 case (1) I Drain current (pulsed) 53 A DM P Total dissipation at T = 25 C 170 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 20 A, di/dt=900 A/s, V peak < V , V = 400 V SD DS (BR)DSS DD 3. V 520 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.74 thj-case C/W R Thermal resistance junction-ambient 50 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 3 A AR (2) E Single pulse avalanche energy 530 mJ AS 1. Pulse width is limited by T Jmax 2. Starting T = 25 C, I = I , V = 50 V j D AR DD DS12622 - Rev 1 page 2/13