X-On Electronics has gained recognition as a prominent supplier of STW26N65DM2 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STW26N65DM2 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STW26N65DM2 STMicroelectronics

STW26N65DM2 electronic component of STMicroelectronics
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Part No.STW26N65DM2
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
Datasheet: STW26N65DM2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
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1 : USD 4.8742
10 : USD 1.7309
100 : USD 1.512
500 : USD 1.3827
1000 : USD 1.2335
5000 : USD 1.2136
10000 : USD 1.1639
25000 : USD 1.134
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MOQ : 1
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1 : USD 3.7316
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7 : USD 2.5375
17 : USD 2.4017
600 : USD 2.3029
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We are delighted to provide the STW26N65DM2 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STW26N65DM2 and other electronic components in the MOSFETs category and beyond.

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STW26N65DM2 Datasheet N-channel 650 V, 0.156 typ., 20 A, MDmesh DM2 Power MOSFET in a TO-247 package Features Order code V R max. I P DS DS(on) D TOT STW26N65DM2 650 V 0.190 20 A 170 W Fast-recovery body diode 3 Extremely low gate charge and input capacitance 2 1 Low on-resistance 100% avalanche tested TO-247 Extremely high dv/dt ruggedness Zener-protected D(2, TAB) Applications Switching applications G(1) Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast- S(3) AM01475V1 recovery diode series. It offers very low recovery charge (Q ) and time (t ) combined rr rr with low R , rendering it suitable for the most demanding high-efficiency DS(on) converters and ideal for bridge topologies and ZVS phase-shift converters. Product status link STW26N65DM2 Product summary Order code STW26N65DM2 Marking 26N65DM2 Package TO-247 Packing Tube DS12622 - Rev 1 - July 2018 www.st.com For further information contact your local STMicroelectronics sales office.STW26N65DM2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Gate-source voltage 25 V GS Drain current (continuous) at T = 25 C 20 case I A D Drain current (continuous) at T = 100 C 12.6 case (1) I Drain current (pulsed) 53 A DM P Total dissipation at T = 25 C 170 W TOT case (2) dv/dt Peak diode recovery voltage slope 50 V/ns (3) dv/dt MOSFET dv/dt ruggedness 50 T Storage temperature range stg -55 to 150 C T Operating junction temperature range j 1. Pulse width is limited by safe operating area. 2. I 20 A, di/dt=900 A/s, V peak < V , V = 400 V SD DS (BR)DSS DD 3. V 520 V DS Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case 0.74 thj-case C/W R Thermal resistance junction-ambient 50 thj-amb Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not repetitive 3 A AR (2) E Single pulse avalanche energy 530 mJ AS 1. Pulse width is limited by T Jmax 2. Starting T = 25 C, I = I , V = 50 V j D AR DD DS12622 - Rev 1 page 2/13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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