DMN2009USS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I Max D BV R Max DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 8m V = 10V 12.8A GS Fast Switching Speed 20V 9m V = 4.5V 12.1A Low Input/Output Leakage GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 12m V = 2.5V GS 10.5A Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: SO-8 Case Material: Molded Plastic,Gree Molding Compound. This MOSFET is designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(ON) Moisture Sensitivity: Level 3 per J-STD-020 ideal for high efficiency power management applications. Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Backlighting Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.074 grams (Approximate) DC-DC Converters D SO-8 S D S D G S D Top View G D S Top View Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2009USS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2009USS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C 12.1 A Drain Current (Note 6) V = 4.5V Steady State I A GS D 9.7 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 100 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 90 C/W A JA Total Power Dissipation (Note 6) 2.0 W P D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 63 C/W A JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 0.7 1.2 V V = V , I = 250A GS(TH) DS GS D 6.3 8 V = 10V, I = 12A GS D Static Drain-Source On-Resistance 6.7 9 m R V = 4.5V, I = 10A DS(ON) GS D 8.7 12 V = 2.5V, I = 8A GS D Diode Forward Voltage V 0.5 0.63 1.2 V V = 0V, I = 3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1706 pF iss Output Capacitance 383 pF C V = 10V, V = 0V, f = 1MHz oss DS GS Reverse Transfer Capacitance 176 pF C rss Gate Resistance 3.0 R V = 0V V = 0V, f = 1MHz g GS DS 16 Total Gate Charge (V = 4.5V) Q GS g 34 Total Gate Charge (V = 10V) Q GS g nC V = 10V, I = 8.5A DS D Gate-Source Charge 1.9 Q gs Gate-Drain Charge 4.5 Q gd Turn-On Delay Time 4.2 ns t D(ON) Turn-On Rise Time 6.2 ns t V = 10V, I = 8.5A R DS D 25 Turn-Off Delay Time t ns V = 4.5V, R = 1.8 D(OFF) GS g 11 Turn-Off Fall Time t ns F 12 Body Diode Reverse Recovery Time t ns RR I = 8.5A, di/dt = 210A/s F 4.7 Body Diode Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 August 2018 DMN2009USS Diodes Incorporated www.diodes.com Document number: DS41068 Rev. 3 - 2 ADVANCED INFORMATION