X-On Electronics has gained recognition as a prominent supplier of STU4N52K3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. STU4N52K3 MOSFETs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

STU4N52K3 STMicroelectronics

STU4N52K3 electronic component of STMicroelectronics
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Part No.STU4N52K3
Manufacturer: STMicroelectronics
Category: MOSFETs
Description: Transistor: N-MOSFET; unipolar; 525V; 2A; 45W; IPAK
Datasheet: STU4N52K3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3: USD 0.518 ea
Line Total: USD 1.55 
Availability - 236
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 3  Multiples: 1
Pack Size: 1
Availability Price Quantity
236
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 3
Multiples : 1
3 : USD 0.518
25 : USD 0.4648
48 : USD 0.3542
130 : USD 0.336

   
Manufacturer
Product Category
Technology
Mounting
Case
Kind Of Package
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STU4N52K3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STU4N52K3 and other electronic components in the MOSFETs category and beyond.

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STD4N52K3, STP4N52K3, STU4N52K3 Datasheet N-channel 525 V, 2.1 typ., 2.5 A MDmesh K3 Power MOSFETs in DPAK, TO-220 and IPAK packages Features TAB TAB 3 Order code V R max. I Package DS DS(on) D 1 DPAK STD4N52K3 2.5 A DPAK 3 2 TO-220 TAB 1 STP4N52K3 525 V 2.6 2.5 A TO-220 STU4N52K3 2.5 A IPAK 3 2 IPAK 1 100% avalanche tested Extremely high dv/dt capability D(2, TAB) Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected G(1) Applications Switching applications S(3) AM01475V1 Description These MDmesh K3 Power MOSFETs are the result of improvements applied to STMicroelectronics MDmesh technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Product status link STD4N52K3 STP4N52K3 STU4N52K3 DS7026 - Rev 3 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STD4N52K3, STP4N52K3, STU4N52K3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Drain-source voltage 525 V DS V Gate-source voltage 30 V GS I Drain current (continuous) at T = 25 C 2.5 A D C I Drain current (continuous) at T = 100 C 2 A D C (1) I Drain current (pulsed) 10 A DM P Total dissipation at T = 25 C 45 W TOT C (2) dv/dt Peak diode recovery voltage slope 12 V/ns T Operating junction temperature range j -55 to 150 C T Storage temperature range stg 1. Pulse width limited by safe operating area. 2. I 2.5 A, di/dt 400 A/s, V V , V = 80% V . SD DSpeak (BR)DSS DD (BR)DSS Table 2. Thermal data Value Symbol Parameter Unit DPAK TO-220 IPAK R Thermal resistance junction-case 2.78 2.78 C/W thj-case R Thermal resistance junction-ambient 62.5 100 C/W thj-amb (1) R Thermal resistance junction-pcb 50 C/W thj-pcb 1. When mounted on 1inch FR-4 board, 2 oz Cu. Table 3. Avalanche characteristics Symbol Parameter Value Unit (1) I Avalanche current, repetitive or not-repetitive 1.3 A AR (2) E Single pulse avalanche energy 110 mJ AS 1. Pulse width limited by T max. j 2. Starting T = 25 C, I = I , V = 50 V. j D AR DD DS7026 - Rev 3 page 2/27

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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