STU2LN60K3 STMicroelectronics

STD2LN60K3, STF2LN60K3, STU2LN60K3 N-channel 600 V, 4 typ., 2 A SuperMESH3 Power MOSFET in DPAK, TO-220FP and IPAK packages Datasheet production data Features TAB R DS(on) Order codes V I P DSS D TOT 3 max 1 3 2 STD2LN60K3 45 W DPAK 1 STF2LN60K3 600 V < 4.5 2 A 20 W TO-220FP STU2LN60K3 45 W TAB 100% avalanche tested 3 Extremely high dv/dt capability 2 1 Very low intrinsic capacitance IPAK Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Applications D(2,TAB) Switching applications Description These SuperMESH3 Power MOSFETs are the G(1) result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. These devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable S(3) for the most demanding applications. AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STD2LN60K3 DPAK Tape and reel STF2LN60K3 2LN60K3 TO-220FP Tube STU2LN60K3 IPAK July 2012 Doc ID 023500 Rev 1 1/20 This is information on a product in full production. www.st.com 20Contents STD2LN60K3, STF2LN60K3, STU2LN60K3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 17 6 Revision history . 19 2/20 Doc ID 023500 Rev 1