STT5N2VH5 STMicroelectronics

STT5N2VH5 N-channel 20 V, 0.025 typ., 5 A STripFET V Power MOSFET in a SOT23-6L package Datasheet production data Features Order code V R max I P DS DS(on) D TOT STT5N2VH5 20 V 0.04 (V =2.5 V) 5 A 1.6 W GS 4 5 Very low profile package 6 3 2 Conduction losses reduced 1 Switching losses reduced SOT23-6L 2.5 V gate drive Very low threshold device Applications Figure 1. Internal schematic diagram Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics STripFETV technology. The device has been optimized to achieve very low on-state resistance, contributing to a FOM that is among the best in its class. Table 1. Device summary Order code Marking Packages Packaging STT5N2VH5 STD1 SOT23-6L Tape and reel March 2014 DocID026116 Rev 1 1/13 This is information on a product in full production. www.st.comContents STT5N2VH5 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 12 2/13 DocID026116 Rev 1