X-On Electronics has gained recognition as a prominent supplier of STTH1002CBY-TR Rectifiers across the USA, India, Europe, Australia, and various other global locations. STTH1002CBY-TR Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

STTH1002CBY-TR STMicroelectronics

STTH1002CBY-TR electronic component of STMicroelectronics
STTH1002CBY-TR STMicroelectronics
STTH1002CBY-TR Rectifiers
STTH1002CBY-TR  Semiconductors

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See Product Specifications
Part No. STTH1002CBY-TR
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers Auto Hi efficiency 2X8A 200V 0.78VF
Datasheet: STTH1002CBY-TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6487 ea
Line Total: USD 2.65 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 2500
Multiples : 2500
2500 : USD 0.2504
5000 : USD 0.2367

0
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 1
Multiples : 1
1 : USD 9.2489
5 : USD 7.945
25 : USD 7.6267
100 : USD 6.7191

0
Ship by Wed. 22 Jan to Fri. 24 Jan
MOQ : 1
Multiples : 1
1 : USD 2.6487
10 : USD 0.9371
100 : USD 0.6867
500 : USD 0.5721
1000 : USD 0.4517
5000 : USD 0.4247
10000 : USD 0.4055
50000 : USD 0.393

0
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 15
Multiples : 15
15 : USD 0.4216
25 : USD 0.3966

0
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 15
Multiples : 15
15 : USD 0.4664
100 : USD 0.4271
500 : USD 0.4227
1000 : USD 0.4047
2500 : USD 0.3966

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
If - Forward Current
Configuration
Vf - Forward Voltage
Ir - Reverse Current
Recovery Time
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We are delighted to provide the STTH1002CBY-TR from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH1002CBY-TR and other electronic components in the Rectifiers category and beyond.

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STTH1002C-Y Automotive high efficiency ultrafast diode Features A1 K Suited for SMPS A2 Low losses Low forward and reverse recovery times K K High junction temperature Low leakage current A2 K K AEC-Q101 qualified A2 A1 A1 2 D PAK DPAK Description STTH1002CGY STTH1002CBY Dual center tap rectifier suited for switch mode power supplies and high frequency DC to DC converters. Table 1. Device summary 2 Packaged in DPAK and D PAK, this device is Symbol Value intended for use in low voltage, high frequency inverters, free wheeling and polarity protection for I Up to 2 x 8 A F(AV) automotive applications. 200 V V RRM T (max) 175 C j V (typ) 0.78 V F (typ) 20 ns t rr November 2011 Doc ID 17536 Rev 2 1/9 www.st.com 9Characteristics STTH1002C-Y 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM 2 20 D PAK I Forward rms current A F(RMS) DPAK 10 T = 155 C Per diode 5 c T = 150 C Per device 10 c I Avarage forward current = 0.5 A F(AV) T = 135 C Per diode 8 c T = 125 C Per device 16 c I Surge non repetitive forward current t = 10 ms sinusoidal 50 A FSM p T Storage temperature range -65 to + 175 C stg T Operating junction temperature range -40 to + 175 C j Table 3. Thermal parameters Symbol Parameter Value (max) Unit Per diode 4.0 R Junction to case th(j-c) Per device 2.5 C/W R Coupling 1.0 th(j-c) When the diodes 1 and 2 are used simultaneously: T (diode1) = P(diode1) x R (per diode) + P(diode2) x R j th(j-c) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 5 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 3 40 j T = 25 C I = 5 A 1.1 j F T = 25 C I = 10 A 1.25 j F (2) V Forward voltage drop V F T = 150 C I = 5 A 0.78 0.89 j F T = 150 C I = 10 A 1.05 j F 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.73 x I + 0.032 I F(AV) F (RMS) 2/9 Doc ID 17536 Rev 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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