STTH1008DTI STMicroelectronics

STTH1008DTI 800 V tandem hyperfast diode Datasheet production data Features A K High voltage rectifier Tandem diodes in series Very low switching losses Insulated device with internal ceramic Equal thermal conditions for both 400 V diodes A Static and dynamic equilibrium of internal K diodes are warranted by design TO-220AC ins STTH1008DTI Description The STTH1008DTI is an ultrahigh performance Table 1. Device summary diode composed of two 400 V dice in series. I 10 A F(AV) I 20 A FRM V 800 V RRM t 40 ns rr I 8.5 A RM V 1.7 V F T 150 C j March 2013 DocID023113 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH1008DTI 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 800 V RRM I Forward rms current 16 A F(RMS) I Average forward current, = 0.5 T = 85 C 10 A F(AV) c I Repetitive peak forward current T = 135 C, = 0.3 20 A FRM c I Surge non repetitive forward current t = 10 ms sinusoidal 120 A FSM p T Storage temperature range -65 to +175 C stg T Maximum junction temperature 150 C j Table 3. Thermal resistance Symbol Parameter Value Unit R Junction to case 2.5 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameters Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 150 C 20 200 j T = 25 C 2.15 2.5 c I = 10 A F T = 150 C 1.7 2.05 c (2) V Forward voltage drop V F T = 25 C 2.45 2.85 c I = 20 A F T = 150 C 2.05 2.45 c 1. Pulse test: t = 5 ms, < 2% P 2. Pulse test: t = 380 s, < 2% P To evaluate the conduction losses use the following equation: 2 P = 1.65 x I + 0.04 x I F(AV) F (RMS) 2/9 DocID023113 Rev 1