1N5623US Microchip

WWW.Microsemi .COM 1N5615US 1N5623US 1N5615US thru 1N5623US SURFACE MOUNT VOIDLESS- HERMETICALLY SEALED FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS DESCRIPTION APPEARANCE This fast recovery surface mount rectifier diode series is military qualified to MIL- PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal Category I metallurgical bond. These devices are also available in axial-leaded package configurations for thru-hole mounting (see separate data sheet for 1N5615 thru 1N5623). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various Package A recovery time speed requirements including fast and ultrafast device types in both or D-5A through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N5615US 1N5623US 1N5615US thru 1N5623US SURFACE MOUNT VOIDLESS- HERMETICALLY SEALED FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave I O input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current V F Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and I R temperature C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse t rr current occurs. GRAPHS FIGURE 1 FIGURE 2 TYPICAL REVERSE CURRENT vs V TYPICAL FORWARD VOLTAGE vs FORWARD CURRENT R Copyright 2009 Microsemi Page 2 10-06-2009 REV E SD47A.pdf Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503