STTH12010TV Ultrafast recovery - high voltage diode Datasheet production data Features A1 K1 Ultrafast, soft recovery Very low conduction and switching losses High frequency and high pulsed current operation A2 K2 High reverse voltage capability High junction temperature A1 Insulated package K1 Electrical insulation = 2500 V rms Capacitance = 45 pF A2 Description K2 The compromise-free, high quality design of this ISOTOP diode has produced a device with low leakage STTH12010TV1 current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make Table 1. Device summary it ideal for heavy duty applications that demand long term reliability. Symbol Value These demanding applications include industrial I 2 x 60 A F(AV) power supplies, motor control, and similar V 1000 V RRM industrial systems that require rectification and freewheeling. This diode also fits into auxiliary t (typ) 49 ns rr functions such as snubber, bootstrap, and T 150 C j demagnetization applications. V (typ) 1.30 V F The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate advantage for reducing maintenance of equipment. October 2012 Doc ID12168 Rev 2 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH12010TV 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 150 A F(RMS) I Average forward current, = 0.5 per diode T = 50 C 60 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 750 A FRM p I Surge non repetitive forward current t = 10 ms sinusoidal 400 A FSM p T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature 150 C j Table 3. Thermal resistance Symbol Parameter Value Unit Per diode 0.80 R Junction to case th(j-c) Total 0.45 C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 20 200 j T = 25 C 2.0 j (2) V Forward voltage drop T = 100 C I = 60 A 1.40 1.80 V F j F T = 150 C 1.30 1.70 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.0067 I F(AV) F (RMS) 2/8 Doc ID12168 Rev 2