STTH120R04TV1 STMicroelectronics

STTH120R04TV Ultrafast recovery diode Main product characteristics A1 K1 A1 K2 I 2 x 60 A F(AV) V 400 V RRM T 150 C j A2 K2 K1 A2 V 0.95 V F (typ) t 31 ns rr (typ) A1 A1 Features and benefits K1 K2 Ultrafast A2 Very low switching losses K1 High frequency and high pulsed current K2 A2 operation ISOTOP ISOTOP Low leakage current STTH120R04TV1 STTH120R04TV2 Insulated package: ISOTOP Electrical insulation = 2500 V RMS Order codes Capacitance = 45 pF Part Number Marking Description STTH120R04TV1 STTH120R04TV1 The STTH120R04TV series uses ST s new 400 V STTH120R04TV2 STTH120R04TV2 planar Pt doping technology. The STTH120R04 is specially suited for switching mode base drive and transistor circuits, such as welding equipment. March 2007 Rev 1 1/7 www.st.com 7Characteristics STTH120R04TV 1 Characteristics Table 1. Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM V Non repetitive peak reverse voltage 400 V RSM I RMS forward current Per diode 140 A F(RMS) Per diode T = 75 C 60 A c I Average forward current, = 0.5 F(AV) Per package T = 70 C 120 A c I Repetitive peak forward current t = 5 s, F = 1 kHz square 1800 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 700 A FSM p T Storage temperature range -65 to + 150 C stg T Maximum operating junction temperature 150 C j Table 2. Thermal parameters Symbol Parameter Value Unit Per diode 0.8 R Junction to case th(j-c) Total 0.45 C/W R Coupling thermal resistance 0.1 th(c) When the diodes are used simultaneously: T = P x R (per diode) + P x R j(diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 60 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 60 600 j T = 25 C 1.5 j (2) V Forward voltage drop T = 100 C I = 60 A 1.05 1.3 V F j F T = 150 C 0.95 1.2 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.9 x I + 0.005 x I F(AV) F (RMS) 2/7