STTH1210DY STMicroelectronics

STTH1210-Y Automotive ultrafast recovery - high voltage diode Datasheet production data Features A K AEC-Q101 qualified Ultrafast, soft recovery Very low conduction and switching losses High frequency and high pulsed current operation A High reverse voltage capability K High junction temperature TO-220AC STTH1210DY Description Table 1. Device summary The high quality design of this diode has I 12 A F(AV) produced a device with low leakage current, regularly reproducible characteristics and intrinsic V 1000 V RRM ruggedness. These characteristics make it ideal T 175 C j for heavy duty applications that demand long term V (typ) 1.30 V F reliability, like automotive applications. t (typ) 48 ns rr These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. October 2012 Doc ID 018921 Rev 1 1/8 This is information on a product in full production. www.st.com 8Characteristics STTH1210-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 30 A F(RMS) I Average forward current, = 0.5 T = 125 C 12 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 120 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 80 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 1.9 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 3 30 j T = 25 C 2.0 j (2) V Forward voltage drop T = 100 C I = 12 A 1.40 1.8 V F j F T = 150 C 1.30 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.033 I F(AV) F (RMS) 2/8 Doc ID 018921 Rev 1