STTH1R04UY STMicroelectronics

STTH1R04-Y Automotive ultrafast recovery diode Datasheet - production data Description This device that uses ST s new 400 V planar Pt doping technology, is specially suited for A switching mode base drive and transistor circuits. Packaged in SMB and SMA, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in K automotive applications. Table 1: Device summary SMB SMA Symbol Value IF(AV) 1 A VRRM 400 V Features Tj (max.) 175 C V (typ.) 0.9 V F AEC-Q101 qualified t (typ.) 14 ns rr Negligible switching losses Low forward and reverse recovery times High junction temperature ECOPACK2 compliant component March 2017 DocID024449 Rev 2 1/12 www.st.com This is information on a product in full production. Characteristics STTH1R04-Y 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage Tj = -40 C to +175 C 400 V SMA T = 130 C l Average forward current, IF(AV) 1.0 A = 0.5, square wave SMB Tl = 140 C t = 10 ms sinusoidal 30 p IFSM Surge non repetitive forward current A tp = 8.3 ms sinusoidal 37 T Storage temperature range -65 to +175 C stg (1) Tj Operating junction temperature -40 to +175 C Notes: (1) (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink. Table 3: Thermal resistance parameters Symbol Parameter Maximum value Unit SMA 30 R Junction to lead C/W th(j-l) SMB 25 Table 4: Static electrical characteristics ( per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 5 j (1) IR Reverse leakage current VR = VRRM A Tj = 125 C - 5 50 T = 25 C - 1.30 1.60 j (2) VF Forward voltage drop Tj = 100 C IF = 1 A - 1.05 1.30 V T = 150 C - 0.90 1.15 j Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: tp = 380 s, < 2% To evaluate the conduction losses, use the following equation: 2 P = 0.9 x I + 0.250 x I F(AV) F (RMS) 2/12 DocID024449 Rev 2