STTH20002TV1 STMicroelectronics

STTH20002TV TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 K1 I Up to 2 x 120 A F(AV) A2 K2 V 200 V RRM T 150C j K1 V (typ) 0.75 V F A1 t (typ) 41 ns rr K2 FEATURES AND BENEFITS A2 Suited for SMPS ISOTOP Very Low Forward Losses STTH20002TV1 Low recovery time High surge current capability Insulated: Insulating voltage=2500V RMS Capacitance = 55pF DESCRIPTION Dual rectifier suited for welding equipment, high power industrial application. Packaged in Isotop, this device is intended for use in the secondary rectification of the applications. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I RMS forward voltage 170 A F(RMS) I Average forward current Tc = 95C Per diode 100 A F(AV) = 0.5 Tc = 80C Per diode 120 I Surge non repetitive forward current tp = 10ms sinusoidal 1000 A FSM T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j Order Codes Part Number Marking STTH20002TV1 STTH20002TV1 July 2004 REV. 2 1/5STTH20002TV THERMAL RESISTANCE Symbol Parameter Maximum Unit R Junction to case Per diode 0.52 C/W th(j-c) Total 0.31 R Coupling 0.1 C/W th(c) When the diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x R (Per diode) + P(diode 2) x R th(j-c) th(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit I * Reverse leakage current T = 25C V = V 100 A R j R RRM T = 125C 80 800 j V ** Forward voltage drop T = 25C I = 100A 1.05 V F j F I = 200A 1.20 F T = 150C I = 100A 0.75 0.85 j F I = 200A 1.05 F Pulse test: * tp = 5 ms, < 2% ** tp = 380 s, < 2% 2 To evaluate the conduction losses use the following equation: P = 0.65 x I + 0.002 I F(AV) F (RMS) DYNAMIC CHARACTERISTICS (per diode) Symbol Parameter Test conditions Min. Typ Max. Unit t Reverse recovery T = 25C I = 1A dI /dt = 200 A/s 41 50 ns rr j F F time V =30V R I Reverse recovery T = 125C I = 100A V = 160V 11.5 15 A RM j F R current dI /dt = 200 A/s F t Forward recovery T = 25C I = 100A dI /dt = 200 A/s 800 ns fr j F F time V = 1.1 x V FR Fmax V Forward recovery T = 25C I = 100A dI /dt = 200 A/s 2.5 V FP j F F voltage 2/5