STTH20004TV1 STMicroelectronics

STTH20004TV1 Ultrafast high voltage rectifier Datasheet - production data Features Ultrafast switching K1 Low reverse current Low thermal resistance A1 Reduces switching and conduction losses Insulated package: K2 Electrical insulation = 2500 V rms Capacitance = 189 pF ECOPACK 2 compliant component A2 Description ISOTOP STTH20004TV1 The STTH20004TV1 uses ST new 400 V technology and is specially suited for use in switching power supplies, welding equipment, and industrial applications, as an output Table 1. Device summary rectification diode. Symbol Value I Up to 2 x 120 A F(AV) V 400 V RRM T (max) 150 C j V (typ) 0.83 V F t (max) 60 ns rr June 2014 DocID11819 Rev 3 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH20004TV1 1 Characteristics Table 2. Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit V Repetitive peak reverse voltage 400 V RRM I Forward rms current 200 A F(RMS) T = 75 C Per diode 100 c I Average forward current, = 0.5 A F(AV) T = 55 C Per diode 120 c I Surge non repetitive forward current t = 10 ms Sinusoidal 900 A FSM p T Storage temperature range -55 to + 150 C stg T Maximum operating junction temperature 150 C j Table 3. Thermal parameter Symbol Parameter Maximum Unit Per diode 0.60 R Junction to case th(j-c) Total 0.35 C/W R Coupling 0.10 th(c) When the diodes 1 and 2 are used simultaneously: T = P x R + P x R j (diode1) (diode1) th(j-c) (per diode) (diode2) th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 100 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 100 1000 j T = 25 C 1.2 j (2) V Forward voltage drop I = 100 A V F F T = 150 C 0.83 1.0 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses use the following equation: 2 P = 0.8 x I + 0.002 I F(AV) F (RMS) 2/9 DocID11819 Rev 3