STTH1L06 STMicroelectronics

STTH1L06 Turbo 2 ultrafast high voltage rectifier Features Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance SMB DO-41 STTH1L06U Description STTH1L06 The STTH1L06/U/A, which is using ST Turbo 2 600 V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. The device is also intended for use as a free SMA wheeling diode in power supplies and other power STTH1L06A switching applications. Table 1. Device summary Symbol Value I 1 A F(AV) V 600 V RRM I (max) 75 A R T (max) 175 C j V (max) 1.05 V F t (max) 80 ns rr October 2009 Doc ID 8321 Rev 4 1/9 www.st.com 9Characteristics STTH1L06 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM DO-41 10 I Forward rms voltage A F(RMS) SMA / SMB 7 DO-41 T = 120 C c I Average forward current = 0.5 SMA T = 135 C 1A F(AV) c SMB T = 145 C c t = 10 ms sinusoidal DO-41 30 p I Surge non repetitive forward current A FSM t = 10 ms sinusoidal SMA / SMB 20 p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value (max) Unit L = 10 mm DO-41 45 R Junction to lead SMA 30 th(j-l) C/W SMB 25 (1) R Junction to ambient L = 10 mm DO-41 70 th(j-a) 2 1. Rth(j-a) is measured with a copper area S = 5 cm (see Figure 14.) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 1 j I Reverse leakage current V = 600 V A R R T = 150 C 10 75 j T = 25 C 1.3 j V Forward voltage drop I = 1 A V F F T = 150 C 0.85 1.05 j To evaluate the conduction losses use the following equation: 2 P = 0.89 x I + 0.165 I F(AV) F (RMS) 2/9 Doc ID 8321 Rev 4