STTH1602CG-TR STMicroelectronics

STTH1602C High efficiency ultrafast diode Datasheet - production data Description A1 K A2 Dual center tap rectifier suited for switch mode power supply and high frequency DC to DC K converters. Packaged either in TO-220AB, TO-220FPAB and 2 D PAK, this device is especially intended for use A2 in low voltage, high frequency inverters, free K A2 K A1 wheeling and polarity protection applications. A1 Table 1: Device summary TO-220AB TO-220FPAB Symbol Value K K I Up to 2 x 10 A F(AV) VRRM 200 V T (max.) 175 C j A2 A2 A1 A1 VF (typ.) 0.78 V DPAK t (typ.) 21 ns rr Features Suited for SMPS Low losses Low forward and reverse recovery time Low leakage current High junction temperature Insulated package: TO-220FPAB insulating voltage: 2000 VRMS sine ECOPACK 2 compliant component for DPAK on demand August 2017 DocID10180 Rev 3 1/15 www.st.com This is information on a product in full production. Characteristics STTH1602C 1 Characteristics Table 2: Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 200 V I Forward rms current 30 A F(RMS) T = 150 C Per diode 8 C T = 140 C Per device 16 C TO-220AB / DPAK TC = 140 C Per diode 10 Average forward TC = 130 C Per device 20 I current = 0.5, A F(AV) Per diode TC = 130 C 8 square wave Per device TC = 100 C 16 TO-220FPAB T = 110 C Per diode 10 C T = 75 C Per device 20 C I Surge non repetitive forward current t = 10 ms sinusoidal 80 A FSM p Tstg Storage temperature range -65 to +175 C Tj Maximum operating junction temperature 175 C Table 3: Thermal parameter Symbol Parameter Value Unit Per diode 3.0 TO-220AB / DPAK Per device 1.9 R Junction to case C/W th(j-c) Per diode 5.5 TO-220FPAB Per device 4.5 TO-220AB / DPAK 0.8 R Coupling C/W th(c) TO-220FPAB 3.5 When the diodes 1 and 2 are used simultaneously: Tj(diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) 2/15 DocID10180 Rev 3