STTH110 STMicroelectronics

STTH110 Datasheet 1000 V - 1 A high efficiency ultrafast diode A Features K Low forwarded voltage drop High reliability A High surge current capability A Soft switching for reduced EMI disturbances Planar technology K K ECOPACK2 compliant DO-41 SMA Applications Switching diode Auxiliary power supply Description The STTH110, which is using ST ultrafast high voltage planar technology, is especially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications. Product status STTH110 Product summary Symbol Value I F(AV) 1 A V 1000 V RRM T 175 C j(max.) V 1.42 V F(typ.) DS3067 - Rev 4 - December 2019 www.st.com For further information contact your local STMicroelectronics sales office.STTH110 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM V Voltage rms 700 V RMS T = 125 C SMA L I Average forward current = 0.5, square wave 1 A F(AV) T = 100 C DO-41 L SMA 18 I Surge non repetitive forward current t = 8.3 ms sinusoidal A FSM p DO-41 20 T Storage temperature range -50 to +175 C stg T Maximum operating junction temperature +175 C j Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit Junction to lead SMA 30 R th(j-l) Junction to lead 45 C/W Lead length = 10 mm DO-41 R Junction to ambient 110 th(j-a) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 10 j (1) I Reverse leakage current V = 1000 V A R R T = 125 C - 50 j T = 25 C - 1.7 j (2) V I = 1 A Forward voltage drop F V F T = 150 C - 0.98 1.42 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.20 x I + 0.225 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS3067 - Rev 4 page 2/11