STTH10LCD06CT STMicroelectronics

STTH10LCD06C Turbo 2 ultrafast - high voltage rectifier for SMPS Features A1 K Ultrafast switching A2 Low reverse current Low thermal resistance Reduces conduction and switching losses A2 A2 K Description K A1 A1 The STTH10LCD06C uses ST Turbo2 technology. TO-220AB TO-220FPAB This device is specially suited for switching power STTH10LCD06CT STTH10LCD06CFP supplies working with interleaved PFCs. K A2 A1 2 D PAK STTH10LCD06CG-TR Table 1. Device summary I 2 x 5A F(AV) V 600 V RRM T 175 C j V (typ) 1.25 V F t (max) 25 ns rr April 2011 Doc ID 15897 Rev 3 1/10 www.st.com 10Characteristics STTH10LCD06C 1 Characteristics (1) Table 2. Absolute ratings Symbol Parameter Value Unit V Repetitive peak reverse voltage 600 V RRM I Forward current rms 20 A F(RMS) Per diode 5 A TO-220AB, T = 130 C 2 c D PAK Per device 10 A Average forward I F(AV) current, = 0.5 Per diode 5 A T = 100 C TO-220FPAB c Per device 10 A I Surge non repetitive forward current t = 10 ms sinusoidal 60 A FSM p T Storage temperature range -65 to + 175 C stg (2) T Maximum operating junction temperature 175 C j 1. Limiting values per diode at 25 C, unless otherwise specified 1 dPtot < 2. condition to avoid thermal runaway for a diode on its own heatsink Rth(j-a) dTj Table 3. Thermal resistance Symbol Parameter Value Unit 2 TO-220AB, D PAK 4.5 R Junction to case(per diode) C/W th(j-c) TO-220FPAB 7.5 Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 1 Reverse leakage j (1) I V = V A R R RRM current T = 150 C 5 50 j T = 25 C 2 j I = 5 A F T = 150 C 1.25 1.6 j (2) V Forward voltage drop V F T = 25 C 2.35 j I = 10 A F T = 150 C 1.55 2 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.2 x I + 0.08 x I F(AV) F (RMS) 2/10 Doc ID 15897 Rev 3