STTH112RL STMicroelectronics

STTH112 High voltage ultrafast rectifier Features Low forwarded voltage drop High reliability High surge current capability Soft switching for reduced EMI disturbances Planar technology DO-41 Description STTH112 The STTH112, which is using ST ultrafast high voltage planar technology, is specially suited for free-wheeling, clamping, snubbering, demagnetization in power supplies and other power switching applications SMA SMB STTH112A STTH112U Table 1. Device summary Symbol Value I 1 A F(AV) V 1200 V RRM T 175 C j (max) V 1.65 V F (max) October 2009 Doc ID 9343 Rev 5 1/8 www.st.com 8Electrical characteristics STTH112 1 Electrical characteristics Absolute ratings (limiting values) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM V Voltage rms 850 V (RMS) Tl = 85C =0.5 DO-41 I Average forward current Tl = 115C =0.5 SMA 1A F(AV) Tl = 125C =0.5 SMB DO-41 20 I Forward surge current t = 8.3 ms SMA A FSM 18 SMB T Storage temperature range - 50 + 175 C stg T Maximum operating junction temperature + 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit L = 10 mm DO-41 45 R Junction to lead SMA 30 th (j-l) C/W SMB 25 R Junction to ambient L = 10 mm DO-41 110 th (j-a) Table 3. Static electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit T = 25 C 5 j I Reverse leakage current V = 1200 V A R R T = 125 C 50 j T = 25 C 1.9 j V Forward voltage drop I = 1 A T = 125 C 1.17 1.65 V F F j T = 150 C 1.10 1.55 j Table 4. Dynamic electrical characteristics Symbol Parameter Tests conditions Min. Typ. Max. Unit I = 0.5 A F t Reverse recovery time T = 25 C 75 ns rr j I = 0.25 A I = 1A rr R t Forward recovery time I = 1 A 500 ns fr F dI /dt = 50 A/s T = 25 C F j V Forward recovery voltage 30 V FP V = 1.1 x V FR Fmax 2/8 Doc ID 9343 Rev 5