X-On Electronics has gained recognition as a prominent supplier of TRS8E65C,S1Q Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. TRS8E65C,S1Q Schottky Diodes & Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

TRS8E65C,S1Q Toshiba

TRS8E65C,S1Q electronic component of Toshiba
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Part No.TRS8E65C,S1Q
Manufacturer: Toshiba
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 8A
Datasheet: TRS8E65C,S1Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.3672
10 : USD 8.4345
50 : USD 7.683
100 : USD 6.9314
250 : USD 6.4416
500 : USD 6.1122
1000 : USD 5.795
2500 : USD 5.795
5000 : USD 5.3558
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Diode Capacitance
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Operating Temperature Range
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TRS8E65C,S1Q from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TRS8E65C,S1Q and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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TRS8E65C SiC Schottky Barrier Diode TRS8E65CTRS8E65CTRS8E65CTRS8E65C 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Power Factor Correction Solar Inverters Uninterruptible Power Supplies DC-DC Converters 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) Forward DC current: I = 8 A F(DC) (2) Repetitive peak reverse voltage: V = 650 V RRM 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode TO-220-2L 4. 4. 4. 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Repetitive peak reverse voltage V 650 V RRM Forward DC current I 8 A F(DC) Forward pulse current I (Note 1) 90 FP I2t limit value I2t (Note 2) 8.0 A2s Junction temperature T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: t = 100s Note 2: f = 50 Hz Start of commercial production 2013-07 2014-03-17 1 Rev.3.0TRS8E65C 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Test Condition Max Unit Thermal resistance (junction-to-case) R 2.35 /W th(j-c) Thermal resistance (junction-to-ambient) R 89 th(j-a) 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) 6. 6. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 4 A (pulse measurement) 1.27 V FM(1) F V I = 8 A (pulse measurement) 1.50 1.70 FM(2) F Repetitive peak reverse current I V = 300 V (pulse measurement) 0.0008 A RRM(1) RRM I V = 650 V (pulse measurement) 0.4 90 RRM(2) RRM Junction capacitance C V = 650 V, f = 1 MHz 44 pF j R 7. 7. 7. 7. MarkingMarkingMarkingMarking Fig. Fig. Fig. Fig. 7.17.17.17.1 MarkingMarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Abbreviation Code Part Number S8E65C TRS8E65C 8. 8. 8. 8. Usage ConsiderationsUsage ConsiderationsUsage ConsiderationsUsage Considerations (1) The absolute maximum ratings are rated values that must not be exceeded during operation, even for an instant. The following are the recommended general derating methods for designing a circuit board using this device. V : V has a temperature coefficient of 0.1 %/ . RRM RRM Take this coefficient into account when designing a circuit board that will be operated in a low-temperature environment. I : We recommend that the worst-case current be no greater than 80 % of the absolute maximum F(DC) rating of I and that the worst-case junction temperature, T , be kept below 140 . F(DC) j I : We recommend that the worst-case current be no greater than 80 % of the absolute maximum FP rating of I and that the worst-case junction temperature, T , be kept below 140 . FP j I2t: This rating specifies a non-repetitive limit value. This only applies to an abnormal operation, which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 140 . j (2) For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website. 2014-03-17 2 Rev.3.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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