TTA1452B Bipolar Transistors Silicon PNP Epitaxial Type TTA1452BTTA1452BTTA1452BTTA1452B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Current Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low collector-emitter saturation voltage: V = -0.4 V (max) (I = -6 A , I = -0.3 A) CE(sat) C B (2) High speed switching: t = 1 s (typ.) stg (3) Complementary to TTC3710B 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) a aaa Characteristics Symbol Rating Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 CEO Emitter-base voltage V -6 EBO Collector current (DC) (Note 1) I -12 A C Collector current (pulsed) (Note 1) I -15 CP Base current I -2 B Collector power dissipation P 2 W C Collector power dissipation (T = 25 ) P 30 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2012-09 2015 Toshiba Corporation 2015-08-06 1 Rev.4.0TTA1452B 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -80 V, I = 0 A -5 A CBO CB E Emitter cut-off current I V = -6 V, I = 0 A -5 EBO EB C Collector-emitter breakdown voltage V I = -50 mA, I = 0 A -80 V (BR)CEO C B DC current gain h V = -1 V, I = -1 A 120 240 FE(1) CE C h V = -1 V, I = -6 A 40 FE(2) CE C Collector-emitter saturation voltage V I = -6 A, I = -0.3 A -0.19 -0.4 V CE(sat) C B Base-emitter saturation voltage V I = -6 A, I = -0.3 A -0.9 -1.2 BE(sat) C B 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V = -5 V, I = -1 A 50 MHz T CE C Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 400 pF ob CB E Switching time (turn-on time) t See Figure 5.2.1. 0.3 s on V -30 V, R = 5 , CC L Switching time (storage time) t 1.0 stg -I = I = 0.3 A, B1 B2 Switching time (fall time) t 0.5 Duty cycle 1% f Fig. 5.2.1 Switching Time Test Circuit Fig. Fig. Fig. 5.2.15.2.15.2.1 Switching Time Test CircuitSwitching Time Test CircuitSwitching Time Test Circuit 6. 6. 6. 6. Marking (Note)Marking (Note)Marking (Note)Marking (Note) Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2015 Toshiba Corporation 2015-08-06 2 Rev.4.0
