X-On Electronics has gained recognition as a prominent supplier of TTA1452B,S4X Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TTA1452B,S4X Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TTA1452B,S4X Toshiba

TTA1452B,S4X electronic component of Toshiba
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Part No.TTA1452B,S4X
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Pb-F POWER MOSFET TRANSISTOR TO-220SIS MOQ=2500 PD=30W F=1MHZ
Datasheet: TTA1452B,S4X Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.1781 ea
Line Total: USD 5.18 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 5.1781
10 : USD 1.8641
50 : USD 1.7502

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TTA1452B,S4X from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTA1452B,S4X and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TTA1452B Bipolar Transistors Silicon PNP Epitaxial Type TTA1452BTTA1452BTTA1452BTTA1452B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications High-Current Switching 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) Low collector-emitter saturation voltage: V = -0.4 V (max) (I = -6 A , I = -0.3 A) CE(sat) C B (2) High speed switching: t = 1 s (typ.) stg (3) Complementary to TTC3710B 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 3. 3. Packaging and Internal CircuitPackaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (T = 25 unless otherwise specified) 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) a aaa Characteristics Symbol Rating Unit Collector-base voltage V -80 V CBO Collector-emitter voltage V -80 CEO Emitter-base voltage V -6 EBO Collector current (DC) (Note 1) I -12 A C Collector current (pulsed) (Note 1) I -15 CP Base current I -2 B Collector power dissipation P 2 W C Collector power dissipation (T = 25 ) P 30 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Mounting torque TOR 0.6 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2012-09 2015 Toshiba Corporation 2015-08-06 1 Rev.4.0TTA1452B 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -80 V, I = 0 A -5 A CBO CB E Emitter cut-off current I V = -6 V, I = 0 A -5 EBO EB C Collector-emitter breakdown voltage V I = -50 mA, I = 0 A -80 V (BR)CEO C B DC current gain h V = -1 V, I = -1 A 120 240 FE(1) CE C h V = -1 V, I = -6 A 40 FE(2) CE C Collector-emitter saturation voltage V I = -6 A, I = -0.3 A -0.19 -0.4 V CE(sat) C B Base-emitter saturation voltage V I = -6 A, I = -0.3 A -0.9 -1.2 BE(sat) C B 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency f V = -5 V, I = -1 A 50 MHz T CE C Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 400 pF ob CB E Switching time (turn-on time) t See Figure 5.2.1. 0.3 s on V -30 V, R = 5 , CC L Switching time (storage time) t 1.0 stg -I = I = 0.3 A, B1 B2 Switching time (fall time) t 0.5 Duty cycle 1% f Fig. 5.2.1 Switching Time Test Circuit Fig. Fig. Fig. 5.2.15.2.15.2.1 Switching Time Test CircuitSwitching Time Test CircuitSwitching Time Test Circuit 6. 6. 6. 6. Marking (Note)Marking (Note)Marking (Note)Marking (Note) Fig. Fig. Fig. Fig. 6.16.16.16.1 MarkingMarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2015 Toshiba Corporation 2015-08-06 2 Rev.4.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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