X-On Electronics has gained recognition as a prominent supplier of TTA006B,Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TTA006B,Q Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TTA006B,Q Toshiba

TTA006B,Q electronic component of Toshiba
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Part No.TTA006B,Q
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Transistor: PNP; bipolar; 230V; 1A; 1.5W; TO126
Datasheet: TTA006B,Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.12 ea
Line Total: USD 1.12 
Availability - 1625
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1625
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.12
5 : USD 0.546
25 : USD 0.4802
41 : USD 0.4158
113 : USD 0.3934

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Kind Of Package
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
Frequency
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We are delighted to provide the TTA006B,Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTA006B,Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TTA006B Bipolar Transistors Silicon PNP Epitaxial Type TTA006BTTA006BTTA006BTTA006B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Power Amplifiers Audio-Frequency Amplifiers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High collector voltage : V = 230 V (min) CEO (2) Small collector output capacitance : C = 30 pF (typ.) ob (3) High transition frequency : f = 70 MHz (typ.) T (4) Complementary to TTC011B 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -230 V CBO Collector-emitter voltage V -230 CEO Emitter-base voltage V -5 EBO Collector current (DC) (Note 1) I -1 A C Collector current (pulsed) (Note 1) I -2 CP Base current I -0.5 B Collector power dissipation P 1.5 W C Collector power dissipation (T = 25 ) P 10 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of commercial production 2014-04 2016 Toshiba Corporation 2016-02-24 1 Rev.1.0TTA006B 5. 5. 5. 5. Electrical CharacteristicsElectrical CharacteristicsElectrical CharacteristicsElectrical Characteristics 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) 5.1. 5.1. Static Characteristics (TStatic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -230 V, I = 0 A -200 nA CBO CB E Emitter cut-off current I V = -5 V, I = 0 A -100 EBO EB C Collector-emitter breakdown voltage V I = -10 mA, I = 0 A -230 V (BR)CEO C B DC current gain h V = -5 V, I = -0.1 A 100 320 FE CE C Collector-emitter saturation voltage V I = -0.5 A, I = -50 mA -1.5 V CE(sat) C B Base-emitter voltage V V = -5 V, I = -0.5 A -1.0 V BE CE C 5.2. 5.2. 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (TDynamic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 30 pF ob CB E Transition frequency f V = -10 V, I = -0.1 A 70 MHz T CE C 6. 6. Marking (Note)Marking (Note) 6. 6. Marking (Note)Marking (Note) Fig. 6.1 Marking Fig. Fig. Fig. 6.16.16.1 MarkingMarkingMarking Note: A line under a Lot No. identifies the indication of product Labels. G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2016 Toshiba Corporation 2016-02-24 2 Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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