X-On Electronics has gained recognition as a prominent supplier of TTA004B,Q Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TTA004B,Q Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TTA004B,Q Toshiba

TTA004B,Q electronic component of Toshiba
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Part No.TTA004B,Q
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP -2.5A 1.5W 280 HFE -0.5V Trans
Datasheet: TTA004B,Q Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1493 ea
Line Total: USD 0.15 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 250
Multiples : 1
250 : USD 0.1925
500 : USD 0.1905
1000 : USD 0.1886
2000 : USD 0.1867
2500 : USD 0.1848
3000 : USD 0.1831
4000 : USD 0.1812
5000 : USD 0.1794
10000 : USD 0.1777

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 250
Multiples : 250
250 : USD 0.1925
500 : USD 0.1905
1000 : USD 0.1886
2000 : USD 0.1867
2500 : USD 0.1848
3000 : USD 0.1831
4000 : USD 0.1812
5000 : USD 0.1794
10000 : USD 0.1777

0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 0.1493

0
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.2168
10 : USD 0.5667
100 : USD 0.3076
500 : USD 0.2413
1000 : USD 0.1864
2500 : USD 0.1698
5000 : USD 0.1584
10000 : USD 0.1491
25000 : USD 0.145

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TTA004B,Q from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTA004B,Q and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TTA004B Bipolar Transistors Silicon PNP Epitaxial Type TTA004BTTA004BTTA004BTTA004B 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Audio-Frequency Amplifiers 2. 2. 2. 2. FeaturesFeaturesFeaturesFeatures (1) High collector voltage: V = -160 V (min) CEO (2) Complementary to TTC004B (3) Small collector output capacitance: C = 17 pF (typ.) ob (4) High transition frequency: f = 100 MHz (typ.) T 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 3. 3. Packaging and Internal Circuit (Note)Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. Start of commercial production 2013-05 2016 Toshiba Corporation 2017-01-09 1 Rev.2.0TTA004B 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -160 V CBO Collector-emitter voltage V -160 CEO Emitter-base voltage V -6 EBO Collector current (DC) (Note 1) I -1.5 A C Collector current (pulsed) (Note 1) I -2.5 CP Base current I -0.5 B Collector power dissipation (T = 25 ) P 1.5 W a C Collector power dissipation (T = 25 ) P 10 c C Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . 5. 5. Electrical CharacteristicsElectrical Characteristics 5. 5. Electrical CharacteristicsElectrical Characteristics 5.1. 5.1. 5.1. 5.1. Static Characteristics (TStatic Characteristics (TStatic Characteristics (TStatic Characteristics (T = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = -160 V, I = 0 A -100 nA CBO CB E Emitter cut-off current I V = -6 V, I = 0 A -100 EBO EB C Collector-emitter breakdown voltage V I = -10 mA, I = 0 A -160 V (BR)CEO C B DC current gain h V = -5 V, I = -1 mA 80 FE(1) CE C h V = -5 V, I = -0.1 A 140 280 FE(2) CE C Collector-emitter saturation voltage V I = -0.5 A, I = -50 mA -0.5 V CE(sat) C B Base-emitter saturation voltage V I = -0.5 A, I = -50 mA -1.3 V BE(sat) C B 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) 5.2. 5.2. Dynamic Characteristics (TDynamic Characteristics (T = 25 = 25 unless otherwise specified) unless otherwise specified) aa aa Characteristics Symbol Test Condition Min Typ. Max Unit Collector output capacitance C V = -10 V, I = 0 A, f = 1 MHz 17 pF ob CB E Transition frequency f V = -10 V, I = -100 mA 100 MHz T CE C 2016 Toshiba Corporation 2017-01-09 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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