X-On Electronics has gained recognition as a prominent supplier of TTA0002(Q) Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. TTA0002(Q) Bipolar Transistors - BJT are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

TTA0002(Q) Toshiba

TTA0002(Q) electronic component of Toshiba
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See Product Specifications
Part No.TTA0002(Q)
Manufacturer: Toshiba
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT BJT PNP -18A 180W 80 HFE -2V Trans
Datasheet: TTA0002(Q) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 4.396 ea
Line Total: USD 4.4 
Availability - 513
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
513
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 1
Multiples : 1
1 : USD 4.396
5 : USD 3.962
6 : USD 3.024
16 : USD 2.856

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TTA0002(Q) from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTA0002(Q) and other electronic components in the Bipolar Transistors - BJT category and beyond.

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TTA0002 TOSHIBA Transistor Silicon PNP Triple Diffused Type TTA0002 Power Amplifier Applications Unit: mm High collector voltage: V = 160 V (min) CEO Complementary to TTC0002 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating Unit Collector-base voltage V -160 V CBO Collector-emitter voltage V -160 V CEO Emitter-base voltage V -5 V EBO DC I -18 A C Collector current Pulse I -35 A CP JEDEC Base current I -9 A B JEITA Collector power dissipation P 180 W C TOSHIBA 2-21F1A Junction temperature T 150 C j Storage temperature range T 55 to 150 C Weight: 9.75 g (typ.) stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Start of commercial production 2009-01 1 2013-11-01 TTA0002 Electrical Characteristics (Tc = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = -160 V, I = 0 -1.0 A CBO CB E Emitter cut-off current I V = -5 V, I = 0 -1.0 A EBO EB C Collector-emitter breakdown voltage V I = -50 mA, I = 0 -160 V (BR) CEO C B h V = -5 V, I = -1 A 80 160 FE (1) CE C DC current gain h V = -5 V, I = -9 A 35 FE (2) CE C Collector-emitter saturation voltage V I = -9 A, I = -0.9 A -2.0 V CE (sat) C B Base-emitter voltage V V = -5 V, I = -9 A -1.5 V BE CE C Transition frequency f V = -5 V, I = -1 A 30 MHz T CE C Collector output capacitance C V = -10 V, I = 0, f = 1 MHz 410 pF ob CB E Marking Part No. (or abbreviation code) TOSHIBA TTA0002 Lot No. JAPAN Note 1 Note 1: Marking for identifying the indication of product Labels G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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