X-On Electronics has gained recognition as a prominent supplier of TTA1713-GR,LF Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. TTA1713-GR,LF Bipolar Transistors - Pre-Biased are a product manufactured by Toshiba. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

TTA1713-GR,LF Toshiba

TTA1713-GR,LF electronic component of Toshiba
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Part No.TTA1713-GR,LF
Manufacturer: Toshiba
Category: Bipolar Transistors - Pre-Biased
Description: Bipolar Transistors - Pre-Biased PNP Transistor VCEO=-45V IC=-0.5A hFE=180 to 390 in SOT-346 S-Mini package
Datasheet: TTA1713-GR,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.7212 ea
Line Total: USD 0.72 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.0515
6000 : USD 0.0507
9000 : USD 0.0502
12000 : USD 0.0497
15000 : USD 0.0491
24000 : USD 0.0486
30000 : USD 0.0481
45000 : USD 0.0477
75000 : USD 0.0472

0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 3000
Multiples : 3000
3000 : USD 0.1124

0
Ship by Mon. 18 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.7212
10 : USD 0.5903
100 : USD 0.1302
500 : USD 0.0833
1000 : USD 0.0577
3000 : USD 0.0448
9000 : USD 0.0395
24000 : USD 0.0374
45000 : USD 0.0352

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Emitter- Base Voltage Vebo
Brand
Maximum Dc Collector Current
Pd - Power Dissipation
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TTA1713-GR,LF from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TTA1713-GR,LF and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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TTA1713 Bipolar Transistors Silicon PNP Epitaxial Type TTA1713TTA1713TTA1713TTA1713 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Low-Frequency Power Amplifiers 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Base 2: Emitter 3: Collector S-Mini 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Rating Unit Collector-base voltage V -50 V CBO Collector-emitter voltage V -45 V CEO Emitter-base voltage V -5 V EBO Collector current I -500 mA C Base current I -50 mA B Collector power dissipation (Note 1) P 200 mW C Junction temperature T 150 j Storage temperature T - 55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Device mounted on a 25.4 mm 25.4 mm 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 3) Start of commercial production 2017-06 2017-2018 2018-05-28 1 Toshiba Electronic Devices & Storage Corporation Rev.1.0TTA1713 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Test Condition Min Typ. Max Unit Collector cut-off current I V = -50 V , I = 0 mA -100 nA CBO CB E Emitter cut-off current I V = -5 V, I = 0 mA -100 nA EBO EB C DC current gain h (1) (Note 1) V = -1 V, I = -100 mA 120 390 FE CE C h (2) V = -1 V, I = -500 mA 40 FE CE C Collector-emitter saturation V I = -500 mA, I = -50 mA -0.4 V CE(sat) C B voltage Base-emitter voltage V V = -1 V, I = -100 mA -1.0 V BE CE C Transition frequency f V = -5 V, I = -10 mA, 80 MHz T CE C f = 100 MHz Collector output capacitance C V = -10 V , I = 0 mA, 4 pF ob CB E f = 1 MHz Note 1: h classification: Y rank 120 to 270, GR rank 180 to 390 FE 5. 5. MarkingMarking 5. 5. MarkingMarking hhhhFEFEFEFE rank: Y rank: Y rank: Y rank: Y hhhhFEFEFEFE rank: GR rank: GR rank: GR rank: GR 2017-2018 2018-05-28 2 Toshiba Electronic Devices & Storage Corporation Rev.1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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