X-On Electronics has gained recognition as a prominent supplier of STTH12T06DI Rectifiers across the USA, India, Europe, Australia, and various other global locations. STTH12T06DI Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

STTH12T06DI STMicroelectronics

STTH12T06DI electronic component of STMicroelectronics
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Part No.STTH12T06DI
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers 600V Tandem Diode 7pF 12A If 15ns
Datasheet: STTH12T06DI Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.92 ea
Line Total: USD 3.92 
Availability - 60
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
60
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 3.92
3 : USD 3.528
7 : USD 2.828
17 : USD 2.674
250 : USD 2.618

   
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Recovery Time
Features Of Semiconductor Devices
Product
Max Load Current
Radiator Thickness
Kind Of Package
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the STTH12T06DI from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH12T06DI and other electronic components in the Rectifiers category and beyond.

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STTH12T06 600 V tandem extra fast diode Datasheet production data Features High voltage rectifier Tandem diodes in series Very low switching losses A K Insulated device with internal ceramic Equal thermal conditions for both 300 V diodes Static and dynamic equilibrium of internal diodes are warranted by design Insulated package: A Capacitance: 7 pF K Insulated voltage: 2500 V rms TO-220AC ins STTH12T06DI Description This device is part of ST s second generation of 600 V tandem diodes. It has ultralow switching- losses with a minimized Q (6.5 nC) that makes RR it perfect for use in circuits working in hard- Table 1. Device summary switching mode. In particular the V /Q trade-off F RR positions this device between standard ultrafast Symbol Value diodes and silicon-carbide Schottky rectifiers in I 12 A terms of price/performance ratio. F(AV) V 600 V RRM The device offers a new positioning giving more flexibility to power-circuit designers looking for t (typ) 15 ns rr good performance while still respecting cost I (typ) 2.3 A RM constraints. V (typ) 2.05 V F Featuring ST s Turbo 2 600 V technology, the I 65 A device is particularly suited as a boost diode in FRM continuous conduction mode power factor T (max) 175 C j correction circuits. May 2013 Doc ID024431 Rev1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH12T06 1 Characteristics Table 2. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit T from 25 to 150 C 600 j V Repetitive peak reverse voltage V RRM T = -40 C 550 j I Forward rms current 22 A F(RMS) T = 75 C I Average forward current, = 0.5 12 A c F(AV) t = 10 ms sinusoidal I Surge non repetitive forward current 90 A p FSM I Repetitive peak forward current T = 75 C, = 0.1 65 A c FRM T Storage temperature range -65 to +175 C stg T Operating junction temperature -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit R Junction to case 2.4 C/W th(j-c) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 40 400 j T = 25 C 2.95 j (2) V Forward voltage drop I = 12A V F F T = 150 C 2.05 2.55 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.75 x I + 0.0667 x I F(AV) F (RMS) 2/9 Doc ID024431 Rev1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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