Product Information

STTH1506DPI

STTH1506DPI electronic component of STMicroelectronics

Datasheet
Rectifiers 15 Amp 600 Volt
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.9053 ea
Line Total: USD 8.91

24 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
24 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

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STTH1506DPI
STMicroelectronics

1 : USD 8.6312
10 : USD 7.5798
30 : USD 6.9373
90 : USD 6.4015

Read More Specifications

     
Manufacturer
Product Category
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Vf - Forward Voltage
Max Surge Current
Recovery Time
Features Of Semiconductor Devices
Product
Max Load Current
Radiator Thickness
Kind Of Package
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Additional Infomation About Product

STTH1506DPI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I 15 A F(AV) 12 V 600 V RRM Tj (max) 150 C V (max) 2.4 V F I (typ.) 4.8 A RM t (typ.) 16 ns rr 2 FEATURES AND BENEFITS 1 n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR DOP3I CORRECTORS AND HARD SWITCHING (insulated) CONDITIONS n DESIGNED FOR HIGH DI/DT OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SIC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS DESCRIPTION n INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR The TURBOSWITCH H is an ultra high BOTH 300V DIODES performance diode composed of two 300V dice in n INSULATION (2500V ) ALLOWS RMS series. TURBOSWITCH H family drastically cuts PLACEMENT ON SAME HEATSINK AS losses in the associated MOSFET when run at MOSFET AND FLEXIBLE HEATSINKING ON high dI /dt. F COMMON OR SEPARATE HEATSINK n STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN n PACKAGE CAPACITANCE: C=16pF ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V 600 V RRM Repetitive peak reverse voltage I 26 A F(RMS) RMS forward current I 130 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal Ipeak 35 A Peak current waveform = 0.15 Tc = 120C T -65 +150 C stg Storage temperature range Tj + 150 C Maximum operating junction temperature October 2003 - Ed: 2A 1/5STTH1506DPI THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit R 1.6 C/W th (j-c) Junction to case STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 20 A R Reverse leakage V =V Tj = 25C R RRM current 30 200 Tj = 125C V ** 3.6 V F Forward voltage drop I = 15A Tj=25C F 1.95 2.4 Tj = 150C Pulse test: * tp = 100ms, <2% ** tp = 380s, <2% To evaluate the maximum conduction losses use the following equation: 2 P=1.7xI + 0.047 x I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit t 16 ns rr Reverse recovery I = 0.5 A Irr = 0.25A Tj = 25C F time I =1A R 35 I =1A dI /dt = - 50A/s F F V =30V R I 4.8 6.0 A RM Reverse recovery V = 400 V I =15A Tj = 125C R F current dI /dt = -200 A/s F S 0.4 - Reverse recovery softness factor Q 80 nC rr Reverse recovery charges TURN-ON SWITCHING CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit t 200 ns fr Forward I =15A dI /dt = 100A/s, Tj = 25C F F recovery time V =1.1xV max FR F V 6V FP Forward I =15A dI /dt = 100 A/s Tj = 25C F F recovery voltage 2/5

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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