STTH1512PI STMicroelectronics

STTH1512 1200 V ultrafast recovery diode Features A K Ultrafast, soft recovery K Very low conduction and switching losses High frequency and/or high pulsed current A A operation K K High reverse voltage capability DOP3I DO247 High junction temperature STTH1512PI STTH1512W Insulated package: DOP3I Electrical insulation = 2500 V rms K Capacitance = 12 pF A A A Description A K The high quality design of this diode has 2 D PAK TO-220AC produced a device with low leakage current, STTH1512G STTH1512D regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal Table 1. Device summary for heavy duty applications that demand long term reliability. Symbol Value Such demanding applications include industrial I 15 A F(AV) power supplies, motor control, and similar V 1200 V RRM mission-critical systems that require rectification and freewheeling. These diodes also fit into T 175 C j auxiliary functions such as snubber, bootstrap, V (typ) 1.20 V F and demagnetization applications. t (typ) 53 ns rr The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. April 2010 Doc ID 12157 Rev 2 1/11 www.st.com 11Characteristics STTH1512 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM 2 I Forward rms current TO-220AC / DO247 / DOP3I / DPAK 50 A F(RMS) 2 TO-220AC / D PAK / T = 130 C Average forward current, c DO247 I 15 A F(AV) = 0.5 DOP3I T = 105 C c Repetitive peak forward I t = 5 s, F = 5 kHz square 200 A FRM p current Surge non repetitive I t = 10 ms Sinusoidal 200 A FSM p forward current T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 3. Thermal parameters Symbol Parameter Value Unit 2 TO-220AC / D PAK / DO247 1.3 C/W R Junction to case th(j-c) DOP3I 2 C/W Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C 15 j Reverse leakage (1) I V = V A R R RRM current T = 125 C 10 100 j T = 25 C 2.10 j (2) V Forward voltage drop T = 125 C I = 15 A 1.25 1.90 V F j F T = 150 C 1.20 1.80 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.4 x I + 0.027 I F(AV) F (RMS) 2/11 Doc ID 12157 Rev 2