STTH1502D STMicroelectronics

STTH1502 Ultrafast recovery diode Main product characteristics I 15 A F(AV) V 200 V RRM K A T (max) 175 C j V (typ) 0.85 V F t (typ) 20 ns K rr Features and benefits A A Very low conduction losses K K Negligible switching losses TO-220AC TO-220FPAC Low forward and reverse recovery time STTH1502D STTH1502FP High junction temperature Insulated packages TO-220FPAC A Electrical insulation 2000 V DC TO-220AC Ins K Electrical insulation 2500 V RMS TO-220AC Ins STTH1502DI Description The STTH1502 uses ST s new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, and Order codes TO-220 Ins, this device is intended for use in low voltage, high frequency inverters, free wheeling Part Number Marking and polarity protection. STTH1502D STTH1502 STTH1502FP STTH1502 STTH1502DI STTH1502DI October 2006 Rev 2 1/10 www.st.comCharacteristics STTH1502 1 Characteristics Table 1. Absolute ratings (limiting values at T = 25 C, unless otherwise specified) j Symbol Parameter Value Unit V Repetitive peak reverse voltage 200 V RRM I RMS forward current 32 A F(RMS) T = 130 C TO-220AC c I Average forward current, = 0.5 TO-220AC Ins T = 105 C 15 A c F(AV) T = 85 C TO-220FPAC c I Surge non repetitive forward current t = 10 ms Sinusoidal 150 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit TO-220AC 2.5 R Junction to case TO-220AC Ins 3.8 C/W th(j-c) TO-220FPAC 5 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 10 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 11.1 j I = 15 A F T = 150 C 0.85 0.95 j (2) V Forward voltage drop T = 125 C I = 30 A 1.05 1.20 V F j F T = 25 C 1.15 1.3 j I = 30 A F T = 150 C 1 1.15 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 0.74 x I + 0.014 I F(AV) F (RMS) 2/10