1N5819HW1 Green 1A SBR SUPER BARRIER RECTIFIER Product Summary Features and Benefits Low forward voltage (V ) minimizes conduction losses and F V (V) I (A) V (V) +25C I (mA) +25C RRM O F(MAX) R(MAX) improving efficiency 40 1 0.51 0.5 Reduced high temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: SOD123F The 1N5819HW1 is a single rectifier packaged in SOD123F. Case Material: Molded Plastic, Green Molding Compound. Offering low V and excellent high temperature stability this device is UL Flammability Classification Rating 94V-0 F ideal for use in general rectification applications as a: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Boost Diode Polarity: Cathode Band Blocking Diode Weight: 0.0016 grams (Approximate) SOD123F Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging 1N5819HW1-7-F SOD123F 3000/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See 1N5819HW1 Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 40 V V RWM DC Blocking Voltage V RM RMS Reverse Voltage V 28 V R(RMS) Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 8.3ms I 30 A FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance, Junction to Ambient (Note 5) 135 C/W R JA Typical Thermal Resistance, Junction to Case (Note 5) 20 C/W R JC Typical Thermal Resistance, Junction to Ambient (Note 6) 75 C/W R JA Typical Thermal Resistance, Junction to Case (Note 6) R 12 C/W JC Operating Junction Temperature Range T -55 to +125 C J Storage Temperature Range T -55 to +150 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 6) 40 V V I = 1.0mA (BR)R R I = 0.1A, T = +25C 0.35 F J I = 1A, T = +25C 0.44 0.51 F J Forward Voltage Drop V 0.36 V I = 1A, T = +125C F F J 0.64 0.75 I = 3A, T = +25C F J 0.63 I = 3A, T = +125C F J V = 4V, T = +25C 0.008 R J 0.010 0.075 V = 6V, T = +25C R J Leakage Current (Note 7) mA I R 0.050 0.5 V = 40V, T = +25C R J 50 V = 40V, T = +125C R J I = 10mA, I = 0.1I , F RRM R Reverse Recovery Time 15 ns t RR T = +25C A Total Capacitance C 30 pF V = 10V, f = 1MHz T R Notes: 5. Device mounted on 1 x MRP FR-4 PC board, 2oz. 6. Device mounted on 1inch sq. copper pad, 2oz. 7. Short duration pulse test used to minimize self-heating effect. 2 of 5 1N5819HW1 October 2015 Diodes Incorporated www.diodes.com Document number: DS37090 Rev. 4 - 2