X-On Electronics has gained recognition as a prominent supplier of STTH3010WY Diodes - General Purpose, Power, Switching across the USA, India, Europe, Australia, and various other global locations. STTH3010WY Diodes - General Purpose, Power, Switching are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Diodes - General Purpose, Power, Switching, ensuring timely deliveries around the world.

STTH3010WY STMicroelectronics

STTH3010WY electronic component of STMicroelectronics
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Part No.STTH3010WY
Manufacturer: STMicroelectronics
Category: Diodes - General Purpose, Power, Switching
Description: STMicroelectronics Diodes - General Purpose, Power, Switching Ultrafast Recovery 30A 1000V 1.30VF
Datasheet: STTH3010WY Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 3.0857 ea
Line Total: USD 1851.42

Availability - 0
MOQ: 600  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 12 Jul to Thu. 18 Jul
MOQ : 600
Multiples : 1
600 : USD 5.2
1000 : USD 5.2
2000 : USD 5.2
2500 : USD 5.2
3000 : USD 5.2
4000 : USD 5.2
5000 : USD 5.2
10000 : USD 5.2
20000 : USD 5.2
50000 : USD 5.2

0
Ship by Thu. 18 Jul to Mon. 22 Jul
MOQ : 1
Multiples : 1
1 : USD 8.9033
10 : USD 3.2124
100 : USD 2.6274
500 : USD 2.2374
1000 : USD 1.8782

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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We are delighted to provide the STTH3010WY from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH3010WY and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

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STTH3010-Y Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q101 qualified A K Ultrafast soft recovery Very low conduction and switching losses K High frequency and/or high pulsed current operation A High reverse voltage capability NC High junction temperature 2 D PAK STTH3010GY ECOPACK 2 compliant component (STTH3010WY) Description A The high quality design of this diode has K produced a device with low leakage current, DO-247 regularly reproducible characteristics and intrinsic STTH3010WY ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Table 1. Device summary The improved performance in low leakage current, and therefore thermal runaway guard I 30 A F(AV) band, is an immediate competitive advantage for V 1000 V RRM this device. T 175 C j V (typ) 1.30 V F t (typ) 42 ns rr June 2012 Doc ID 018923 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH3010-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 50 A F(RMS) DO-247 T = 105 C c I Average forward current, = 0.5 30 A F(AV) 2 D PAK T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit DO-247 R Junction to case 1.1 C/W th(j-c) 2 D PAK Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 30 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.013 I F(AV) F (RMS) 2/9 Doc ID 018923 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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