X-On Electronics has gained recognition as a prominent supplier of STTH3012W Rectifiers across the USA, India, Europe, Australia, and various other global locations. STTH3012W Rectifiers are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

STTH3012W STMicroelectronics

STTH3012W electronic component of STMicroelectronics
STTH3012W STMicroelectronics
STTH3012W Rectifiers
STTH3012W  Semiconductors

Images are for reference only
See Product Specifications
Part No. STTH3012W
Manufacturer: STMicroelectronics
Category: Rectifiers
Description: Rectifiers Ultrafast recovery 1200 V diode
Datasheet: STTH3012W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
241: USD 1.9253 ea
Line Total: USD 464 
Availability - 233
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ: 241  Multiples: 241
Pack Size: 241
Availability Price Quantity
5
Ship by Fri. 31 Jan to Wed. 05 Feb
MOQ : 1
Multiples : 1
1 : USD 4.8056
10 : USD 4.222
30 : USD 3.718
100 : USD 3.3687
500 : USD 3.207
1000 : USD 3.1344
2000 : USD 3.0934

405
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 14
Multiples : 1
14 : USD 4.771
26 : USD 2.496
50 : USD 2.145
200 : USD 2.132

233
Ship by Fri. 24 Jan to Thu. 30 Jan
MOQ : 241
Multiples : 241
241 : USD 1.9253

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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We are delighted to provide the STTH3012W from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the STTH3012W and other electronic components in the Rectifiers category and beyond.

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STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A K I 30 A F(AV) V 1200 V RRM T 175 C j A V (typ) 1.30 V F K t (typ) 57 ns rr DO-247 STTH3012W Features and benefits Ultrafast, soft recovery Very low conduction and switching losses A High frequency and/or high pulsed current operation K TO-220AC High reverse voltage capability STTH3012D High junction temperature Description The high quality design of this diode has Order codes produced a device with low leakage current, regularly reproducible characteristics and intrinsic Part Number Marking ruggedness. These characteristics make it ideal for heavy duty applications that demand long term STTH3012D STTH3012D reliability. STTH3012W STTH3012W Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/9 www.st.com 9Characteristics STTH3012 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1200 V RRM I RMS forward current 50 A F(RMS) I Average forward current, = 0.5 T = 105 C 30 A F(AV) c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 210 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit R Junction to case 0.95 C/W th(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 20 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 15 150 j T = 25 C 2.1 j T = 125 C I = 25 A 1.25 1.9 j F T = 150 C 1.20 1.8 j (2) V Forward voltage drop V F T = 25 C 2.25 j T = 125 C I = 30 A 1.35 2.05 j F T = 150 C 1.30 1.95 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.60 x I + 0.012 I F(AV) F (RMS) 2/9

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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