STTH3006PI STMicroelectronics

STTH3006 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description The device is developed using ST s Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in continuous mode power factor corrections and hard switching conditions. This device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 1: Device summary Symbol Value IF(AV) 30 A VRRM 600 V Features VF (typ.) 1.10 V Ultrafast switching T 175 C j Low reverse current Low thermal resistance trr (max) 50 ns Reduces switching and conduction losses Insulated package: DOP3I Insulating voltage = 2500 VRMS sine May 2017 DocID12368 Rev 4 1/12 www.st.com This is information on a product in full production. Characteristics STTH3006 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V I Forward rms current 50 A F(RMS) DO-247 TC = 115 C Average forward current, IF(AV) 30 A = 0.5 square wave DOP3I TC = 85 C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A T Storage temperature range -65 to +175 C stg Tj Maximum operating junction temperature 175 C Table 3: Thermal parameters Symbol Parameter Max. value Unit DO-247 1.1 Junction to case Rth(j-c) C/W DOP3I 1.7 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 25 j (1) IR Reverse leakage current VR = VRRM A Tj = 150 C - 80 800 T = 25 C - 1.85 j (2) VF Forward voltage drop IF = 30 A V Tj = 150 C - 1.10 1.40 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.07 x I + 0.011 x I F(AV) F (RMS) 2/12 DocID12368 Rev 4