STTH302RL STMicroelectronics

STTH302 HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS I 3A F(AV) V 200 V RRM Tj (max) 175 C V (max) 0.75 V F trr (max) 35 ns FEATURES AND BENEFITS n Very low conduction losses n Negligible switching losses n Low forward and reverse recovery times n High junction temperature DO-201AD DESCRIPTION STTH302 The STTH302 which is using ST s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V 200 V RRM Repetitive peak reverse voltage I 3A F (AV) Average forward current TI = 107C = 0.5 I 130 A FSM Surge non repetitive forward current t = 10ms Sinusoidal p T -65to+175 C stg Storage temperature range Tj 175 C Maximum operating junction temperature THERMAL PARAMETERS Symbol Parameter Value Unit Rth (j-a) 25 C/W Junction-ambient* * On infinite heatsink with 10mm lead length. November 2001 - Ed: 1A 1/5STTH302 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test Conditions Min. Typ. Max. Unit I * 3 A R Reverse leakage current T = 25C V =V j R RRM 475 T = 125C j V ** 0.95 V F Forward voltage drop T = 25C I =3A j F 0.66 0.75 T = 125C j Pulse test:*tp=5ms, <2% ** tp = 380 s, <2% To evaluate the maximum conduction losses use the following equations: 2 P=0.60xI + 0.05 I F(AV) F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery 35 ns I =1A dI /dt = - 50A/s T = 25C F F j time V = 30V R tfr Forward recovery 70 ns I =3A dI /dt = 50A/s T = 25C F F j time V =1.1xV max FR F V Forward recovery 1.6 V FP T = 25C j voltage 2/5