STTH2R02UY STMicroelectronics

STTH2R02-Y Datasheet Automotive 200 V, 2 A ultrafast recovery diode Features A K AEC-Q101 qualified A Very low conduction losses Negligible switching losses Low forward and reverse recovery times High junction temperature PPAP capable K ECOPACK2 compliant SMB Applications High frequency inverters Freewheeling diode Polarity protection Reverse battery protection Description This 2 A, 200 V uses ST s 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Product status STTH2R02-Y Product summary Symbol Value I F(AV) 2 A V 200 V RRM T 175 C j(max.) V 0.7 V F(typ.) trr(typ.) 15 ns DS6945 - Rev 3 - July 2020 www.st.com For further information contact your local STMicroelectronics sales office.STTH2R02-Y Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage (Tj = -40 C to +175 C) 200 V RRM I t = 5 s, f = 5 kHz Repetitive peak forward current 60 A FRM p I Forward rms current 60 A F(RMS) I T = 90 C Average forward current = 0.5, square wave 2 A F(AV) L I Surge non repetitive forward current t = 10 ms sinusoidal 75 A FSM p T Storage temperature range -65 to +175 C stg (1) T -40 to +175 C j Operating junction temperature range 1. (dP /dT ) < (1/R ) condition to avoid thermal runaway for a diode on its own heatsink. tot j th(j-a) Table 2. Thermal resistance parameter Symbol Parameter Max. value Unit R Junction to lead 30 C/W th(j-l) For more information, please refer to the following application note : AN5088 : Rectifiers thermal management, handling and mounting recommendations Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 3 j (1) V = V I Reverse leakage current A R R RRM T = 125 C - 2 20 j T = 25 C I = 6 A - 1.20 j F T = 25 C - 0.89 1.00 j (2) V Forward voltage drop V F T = 100 C I = 2 A - 0.76 0.85 j F T = 150 C - 0.70 0.80 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.68 x I + 0.06 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses : AN604: Calculation of conduction losses in a power rectifier AN4021: Calculation of reverse losses on a power diode DS6945 - Rev 3 page 2/10