STTH2003 Datasheet 300 V ultrafast rectifier Features A1 K A2 Combines highest recovery and reverse voltage performance Ultra-fast, soft and noise-free recovery Insulated package: TO-220FPAB K Insulating voltage = 2000 V sine RMS ECOPACK 2 compliant component for DPAK on demand A2 A2 K K A1 A1 Applications TO-220AB TO-220FPAB Secondary rectification Switching diode K Telecom power supply DC/DC converter A2 K A1 Description 2 I PAK The STTH2003 is a dual center tap fast recovery epitaxial diodes suited for switch K K mode power supply and high frequency DC/DC converters. Packaged in TO-220AB, TO-220FPAB, IPAK or DPAK, this device is especially intended for secondary rectification. A2 A2 A1 A1 2 D PAK Product status STTH2003 Product summary I 2 x 10 A F(AV) V 300 V RRM T (max.) 175 C j V (typ.) 0.85 V F t (max.) 25 ns rr DS1213 - Rev 12 - August 2018 www.st.com For further information contact your local STMicroelectronics sales office.STTH2003 Characteristics 1 Characteristics Table 1. Absolute ratings (limiting values, per diode, at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 300 V RRM I Forward rms current 30 A F(RMS) TO-220AB, DPAK, IPAK T = 140 C C Per diode 10 Average forward current = 0.5, square I TO-220FPAB T = 115 C A F(AV) C wave All types Per device 20 I Surge non repetitive forward current t = 10 ms sinusoidal 110 A FSM p T Storage temperature range -65 to +175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal resistance parameters Symbol Parameter Value Unit TO-220AB, DPAK, IPAK 2.5 Per diode TO-220FPAB 4.6 R Junction to case C/W th(j-c) TO-220AB, DPAK, IPAK 1.3 Total TO-220FPAB 4.0 TO-220AB, DPAK, IPAK 0.1 R Coupling C/W th(c) TO-220FPAB 3.5 For more information, please refer to the following application note: AN5088: Rectifiers thermal management, handling and mounting recommendations When the diodes 1 and 2 are used simultaneously: T = P x R (per diode) + P x R j (diode1) (diode1) th(j-c) (diode2) th(c) Table 3. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 20 j (1) I Reverse leakage current V = 300 V A R R T = 125 C - 30 300 j T = 25 C - 1.25 j (2) I = 10 A V Forward voltage drop V F F T = 125 C - 0.85 1.0 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 0.75 x I + 0.025 x I F(AV) F (RMS) For more information, please refer to the following application notes related to the power losses: DS1213 - Rev 12 page 2/16