STTH200L06TV1 STMicroelectronics

STTH200L06TV Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description A1 K1 This device, which uses ST Turbo 2 600 V A2 K2 technology, is especially suited for use in switching power supplies and industrial applications, like rectification and freewheeling A2 diodes. K2 Table 1: Device summary Symbol Value A1 K1 I up to 2 x 120 A F(AV) VRRM 600 V ISOTOP T (max.) 150 C j VF (typ.) 0.95 V Features t (max.) 80 ns rr Ultrafast switching Low reverse current Low thermal resistance TM: ISOTOP is a trademark of Reduces switching and conduction losses STMicroelectronics Insulated package ISOTOP: Insulated voltage: 2500 VRMS sine November 2017 DocID10767 Rev 3 1/10 www.st.com This is information on a product in full production. Characteristics STTH200L06TV 1 Characteristics Table 2: Absolute ratings (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V I Forward rms current 180 A F(RMS) Tc = 65 C, per diode 100 Average forward current, IF(AV) A = 0.5 Tc = 35 C, per diode 120 IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 800 A T Storage temperature range -55 to +150 C stg Tj Maximum operating junction temperature 150 C Table 3: Thermal parameters Maximum Symbol Parameter Unit values Per diode 0.60 Junction to case Rth(j-c) Total 0.35 C/W R Coupling 0.1 th(c) When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c) Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 100 j (1) IR Reverse leakage current V = V A R RRM Tj = 125 C - 100 1000 T = 25 C - 1.55 j (2) VF Forward voltage drop IF = 100 A V Tj = 150 C - 0.95 1.20 Notes: (1) Pulse test: t = 5 ms, < 2% p (2) Pulse test: t = 380 s, < 2% p To evaluate the maximum conduction losses, use the following equation: 2 P = 0.93 x IF(AV) + 0.0027 x IF (RMS) 2/10 DocID10767 Rev 3