STTH3010D STMicroelectronics

STTH3010 Ultrafast recovery - high voltage diode Main product characteristics I 30 A F(AV) A K V 1000 V RRM T 175 C j V (typ) 1.30 V F A t (typ) 42 ns rr K TO-220AC Features and benefits STTH3010D Ultrafast, soft recovery Very low conduction and switching losses A High frequency and/or high pulsed current A operation K K High reverse voltage capability DO-247 DOP3I High junction temperature STTH3010W STTH3010PI Insulated package: DOP3I Electrical insulation = 2500 V RMS Capacitance = 12 pF Order codes Part Number Marking Description STTH3010D STTH3010D The high quality design of this diode has produced a device with low leakage current, STTH3010W STTH3010W regularly reproducible characteristics and intrinsic STTH3010PI STTH3010PI ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability. Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications. The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device. March 2006 Rev 1 1/10 www.st.com 10Characteristics STTH3010 1 Characteristics Table 1. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I RMS forward current 50 A F(RMS) TO-220 / DO-247 T = 105 C c I Average forward current, = 0.5 30 A F(AV) DOP3I T = 65 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j Table 2. Thermal parameters Symbol Parameter Value Unit TO-220 / DO-247 1.1 R Junction to case C/W th(j-c) DOP3I 1.8 Table 3. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 30 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2 % p 2. Pulse test: t = 380 s, < 2 % p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.013 I F(AV) F (RMS) 2/10