STTH30R03CG STMicroelectronics

STTH30R03CW/CG HIGH FREQUENCY SECONDARY RECTIFIER MAJOR PRODUCT CHARACTERISTICS I 2x15A F(AV) V 300 V RRM I (typ.) 4.5A RM Tj (max) 175 C A2 K V (max) 1.4 V F A1 trr (max) 35 ns TO-247 STTH30R03CW FEATURES AND BENEFITS n Designed for high frequency applications. K n Hyperfast recovery competes with GaAs devices. n Allows size decrease of snubbers and heatsinks. DESCRIPTION A2 A1 The TURBOSWITCH is an ultra high performance diode. 2 D PAK This TURBOSWITCH family, which drastically STTH30R03CG cuts losses in associated MOSFET when run at high dI /dt, is suited for HF OFF-Line SMPS and F DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit V 300 V RRM Repetitive peak reverse voltage I 30 A F(RMS) RMS forward current I 15 A F(AV) Average forward current Tc = 120C Per diode 30 = 0.5 Per device I 120 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal T - 65 + 175 C stg Storage temperature range Tj + 175 C Maximum operating junction temperature July 2002 - Ed: 1C 1/6STTH30R03CW/CG THERMAL AND POWER DATA Symbol Parameter Value Unit R 2.0 C/W th (j-c) Junction to case Per diode 1.2 Total R 0.4 th (c) Coupling STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit I * 20 A R Reverse leakage V =V Tj = 25C R RRM current 30 200 Tj = 125C V ** 1.9 V F Forward voltage drop I = 15 A Tj = 25C F 1.1 1.4 Tj = 125C Pulse test : * tp=5ms, <2% ** tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=1xI + 0.026 I F(AV) F (RMS) RECOVERY CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit trr 20 ns I = 0.5 A Irr = 0.25 A I = 1A Tj = 25C F R 35 I =1A dI /dt=-50A/sV = 30V F F R I 4.5 6 A RM V = 200 V I = 15A dI /dt = - 200A/s Tj = 125C R F F S factor 0.4 TURN-ON SWITCHING CHARACTERISTICS Symbol Tests conditions Min. Typ. Max. Unit t 300 ns fr Tj = 25C I = 15A dI /dt = 100A/s F F measured at 1.1xV max F V 3.5 V FP Tj = 25C I = 15A dI /dt = 100A/s F F 2/5